TI TLC27M4AINE4

The TLC27M4 and TLC27M9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds comparable to that of general-purpose bipolar devices. These devices use silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents, make these cost-effective devices ideal for applications that have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV) to the high-precision TLC27M9 (900 μV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology are available on LinCMOS™ operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications. The device inputs and outputs are designed to withstand -100 mA surge currents without sustaining latch-up. The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.

• Trimmed Offset Voltage TLC27M9... 900 μV Max at Tₐ = 25 °C, V₍DD₎ = 5 V
• Input Offset Voltage Drift... Typically 0.1 μV/Month, Including the First 30 Days
• Wide Range of Supply Voltages Over Specified Temperature Range:
  • 0 °C to 70 °C... 3 V to 16 V
  • -40 °C to 85 °C... 4 V to 16 V
  • -55 °C to 125 °C... 4 V to 16 V
• Single-Supply Operation
• Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix Types)
• Low Noise... Typically 32 nV/√Hz at f = 1 kHz
• Low Power... Typically 2.1 mW at Tₐ = 25 °C, V₍DD₎ = 5 V
• Output Voltage Range Includes Negative Rail
• High Input Impedance... 10¹² Ω Typ
• ESD-Protection Circuitry
• Small-Outline Package Option
• Also Available in Tape and Reel
• Designed-In Latch-Up Immunity

• Sensor interface
• Analog computation
• Amplifier module
• Active filter
• Signal buffering
• Remote, hard-to-maintain battery-powered applications
• Legacy design upgrade