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Nexperia BSH205G2R
| Fabricante | |
| N.º de pieza fab. | BSH205G2R |
| Nº LCSC | C426799 |
| Emb. | SOT-23 |
| Número de Cliente | |
| Atrib. clave | MOSFET P-CH 20V 2.3A SOT-23 |
| Hoja de Datos | Nexperia BSH205G2R |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 890mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| RDS(on) | 170mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 418pF | |
| Gate Charge(Qg) | 6.5nC@4.5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 890mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| RDS(on) | 170mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 418pF | |
| Gate Charge(Qg) | 6.5nC@4.5V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Características
Traducción por IA
- Low threshold voltage
- Low on-state resistance
- Trench MOSFET technology
- Enhanced power dissipation capability of 890 mW
- AEC-Q101 qualified
Aplicaciones
Traducción por IA
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
En stock: 250
250 En stock, envío inmediato
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.2665 | $ 1.33 |
| 50+ | $ 0.2102 | $ 10.51 |
| 150+ | $ 0.1861 | $ 27.92 |
| 500+ | $ 0.156 | $ 78.00 |
| 3,000+ | $ 0.142 | $ 426.00 |
| 6,000+ | $ 0.134 | $ 804.00 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 890mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| RDS(on) | 170mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 418pF | |
| Gate Charge(Qg) | 6.5nC@4.5V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Nexperia | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 890mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF | |
| RDS(on) | 170mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 418pF | |
| Gate Charge(Qg) | 6.5nC@4.5V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Características
Traducción por IA
- Low threshold voltage
- Low on-state resistance
- Trench MOSFET technology
- Enhanced power dissipation capability of 890 mW
- AEC-Q101 qualified
Aplicaciones
Traducción por IA
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
C426799 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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