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XNRUSEMI XR30N03
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XR30N03 |
| LCSC Part # | C42456776 |
| Packaging | TO-252-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 30A TO-252-3L |
| Datasheet | XNRUSEMI XR30N03 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-252-3L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 108pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 551pF | |
| Pd - Power Dissipation | 11.5W | |
| Reverse Transfer Capacitance (Crss) | 93pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-252-3L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 108pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 551pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 11.5W | |
| Reverse Transfer Capacitance (Crss) | 93pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XR30N03 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge performance in most synchronous buck converter applications. XR30N03 is RoHS compliant and meets green product requirements, with 100% avalanche energy (EAS) testing for full functional reliability.
Features
AI Translation
- Ultra-low gate charge
- 100% avalanche energy (EAS) guaranteed
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 1,280
1,280 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0699$ 0.0665 | $ 0.67 |
| 100+ | $ 0.0557$ 0.0530 | $ 5.30 |
| 300+ | $ 0.0486$ 0.0462 | $ 13.86 |
| 2,500+ | $ 0.0433$ 0.0412 | $ 103.00 |
| 5,000+ | $ 0.0391$ 0.0372 | $ 186.00 |
| 10,000+ | $ 0.037$ 0.0352 | $ 352.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-252-3L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 108pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 551pF | |
| Pd - Power Dissipation | 11.5W | |
| Reverse Transfer Capacitance (Crss) | 93pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-252-3L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 108pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 551pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 11.5W | |
| Reverse Transfer Capacitance (Crss) | 93pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XR30N03 is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge performance in most synchronous buck converter applications. XR30N03 is RoHS compliant and meets green product requirements, with 100% avalanche energy (EAS) testing for full functional reliability.
Features
AI Translation
- Ultra-low gate charge
- 100% avalanche energy (EAS) guaranteed
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| XR60N04B | XNRUSEMI | Similar | TO-252-3L | 545 | $0.0919 $0.0967 | ||
| XR50N04 | XNRUSEMI | Similar | TO-252-3L | 1,835 | $0.0846 $0.089 | ||
| XRS80N10 | XNRUSEMI | Similar | TO252-3L | 425 | $0.3587 $0.3775 | ||
| XR120N03 | XNRUSEMI | Similar | TO-252-3L | 2,470 | $0.1254 $0.1319 | ||
| XR60N03 | XNRUSEMI | Similar | TO-252-3L | 740 | $0.0775 $0.0815 |