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Bestirpower BMB65N380E1
| Manufacturer | BestirpowerAsian Brands |
| MPN | BMB65N380E1 |
| LCSC Part # | C42401707 |
| Packaging | TO-263-2L |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 9.6A TO-263-2L |
| Datasheet | Bestirpower BMB65N380E1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 650V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9.6A | |
| Ciss-Input Capacitance | 624pF | |
| Pd - Power Dissipation | 87W | |
| Reverse Transfer Capacitance (Crss) | 224pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 650V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9.6A | |
| Ciss-Input Capacitance | 624pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 87W | |
| Reverse Transfer Capacitance (Crss) | 224pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BMB65N380E1 is power MOSFET using bestirpower's advanced super junction technology that can realize very low on- resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Features
AI Translation
- Reduced Switching & Conduction Losses
- Lower Switching Noise
- 100% Avalanche Tested
- Pb free, Halogen Free, and RoHS Compliant
Applications
AI Translation
- PFC, Hard & Soft Switching Topologies
- Industrial & Consumer Power Supplies
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 310
310 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5687$ 0.5119 | $ 0.51 |
| 10+ | $ 0.4622$ 0.4160 | $ 4.16 |
| 50+ | $ 0.3884$ 0.3496 | $ 17.48 |
| 100+ | $ 0.336$ 0.3024 | $ 30.24 |
| 500+ | $ 0.3049$ 0.2745 | $ 137.25 |
| 1,000+ | $ 0.2885$ 0.2597 | $ 259.70 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 650V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9.6A | |
| Ciss-Input Capacitance | 624pF | |
| Pd - Power Dissipation | 87W | |
| Reverse Transfer Capacitance (Crss) | 224pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Bestirpower | |
| Packaging | TO-263-2L | |
| Drain to Source Voltage | 650V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9.6A | |
| Ciss-Input Capacitance | 624pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 87W | |
| Reverse Transfer Capacitance (Crss) | 224pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BMB65N380E1 is power MOSFET using bestirpower's advanced super junction technology that can realize very low on- resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Features
AI Translation
- Reduced Switching & Conduction Losses
- Lower Switching Noise
- 100% Avalanche Tested
- Pb free, Halogen Free, and RoHS Compliant
Applications
AI Translation
- PFC, Hard & Soft Switching Topologies
- Industrial & Consumer Power Supplies
C42401707 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| BMB65N380C1 | Bestirpower | Similar | TO-263 | 137 | $0.4949 $0.5498 | ||
| BMB65N380E2 | Bestirpower | Similar | D2PAK | 65 | $ 0.5556 | ||
| BMB65N100UC1 | Bestirpower | Similar | D2PAK | 10 | $ 1.6159 | ||
| BMB80N180C1 | Bestirpower | Similar | TO-263-2L | 25 | $1.7561 $1.9088 | ||
| BMB65N046UE1 | Bestirpower | Similar | D2PAK | 80 | $ 3.5677 |