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Unilc SCB13H4G160AF-11MI product image
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Unilc SCB13H4G160AF-11MI

Manufacturer
UnilcAsian Brands
MPN
SCB13H4G160AF-11MI
LCSC Part #
C42379871
Packaging
PG-TFBGA-96
Customer #
Key Attributes
4Gbit 933MHz DDR3L SDRAM PG-TFBGA-96 Memory RoHS
DatasheetUnilc SCB13H4G160AF-11MI
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 41
41 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 32.5969$ 32.60
30+$ 31.0188$ 930.56
Standard Packaging209/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerUnilc
PackagingPG-TFBGA-96
Operating Temperature-40℃~+95℃
FeaturesAuto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function
Refresh Current-
Memory Size4Gbit
Voltage - Supply1.283V~1.45V;-
Clock Frequency933MHz
Memory FormatDDR3L SDRAM
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Features

AI Translation
  • VDD = VDDQ = 1.35V (1.283V to 1.45V), backward compatible with VDD = VDDQ = 1.5V ± 0.075V
  • DDR3L device backward compatibility in 1.5V applications
  • Data rates: 1600 Mbps / 1866 Mbps / 2133 Mbps
  • Bidirectional differential data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CKB)
  • 8 internal banks
  • Nominal and dynamic on-die termination for data, strobe, and mask signals
  • Programmable CAS read latency
  • Programmable CAS write latency
  • Fixed burst length 8 or burst chop 4 via mode register set
  • Dynamic switching between burst chop 4 and burst length 8
  • Self-refresh mode
  • Operating temperature range: 0°C to +95°C
  • 8192 refresh cycles within 64ms at 0°C to +85°C
  • 32ms refresh at +85°C to +95°C
  • Self-refresh temperature range
  • Auto self-refresh
  • Write leveling
  • Multi-purpose register
  • Output driver calibration
  • Configuration options: 512 Mb × 8 or 256 Mb × 16
  • Package options: 78-ball FBGA (10.6mm × 7.5mm) for ×8; 96-ball FBGA (13.5mm × 7.5mm) for ×16
  • Timing — cycle time: 938ps at DDR3-2133 (CL = 14); 1.07ns at DDR3-1866 (CL = 13); 1.25ns at DDR3-1600 (CL = 11)
  • Operating temperature: Commercial (0°C ≤ TC ≤ +95°C), Industrial (-40°C ≤ TC ≤ +95°C)