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Modele EDAEasyEDA
VBsemi Elec FDS3170N7-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | FDS3170N7-VB |
| Nr LCSC | C41370232 |
| Opak. | SO-8 |
| Numer Klienta | |
| Klucz. cechy | 100V 10.4A 4.5V 5.9W 27mΩ@8V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs |
| Karta Katalogowa |  VBsemi Elec FDS3170N7-VB |
| Części alternatywne | 16 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 10.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 5.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 27mΩ@8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.735nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 10.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 5.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 27mΩ@8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.735nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-free per IEC 61249-2-21
- Ultra-low Qgd for reduced switching losses
- 100% Rg tested
- 100% avalanche tested
- RoHS compliant per directive 2002/95/EC
Zastosowania
Tłumaczenie AI
- Primary-side switch
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.003 | $ 1.00 |
| 200+ | $ 0.4006 | $ 80.12 |
| 500+ | $ 0.3879 | $ 193.95 |
| 1,000+ | $ 0.3799 | $ 379.90 |
Standardowa Obudowa4000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 10.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 5.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 27mΩ@8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.735nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SO-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 160pF | |
| Current - Continuous Drain(Id) | 10.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 5.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 27mΩ@8V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.735nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
Zgłoś błądPokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-free per IEC 61249-2-21
- Ultra-low Qgd for reduced switching losses
- 100% Rg tested
- 100% avalanche tested
- RoHS compliant per directive 2002/95/EC
Zastosowania
Tłumaczenie AI
- Primary-side switch
C41370232 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| HM4454-VB | VBsemi Elec | SO-8 | 45 | $0.6500 $0.7646 | ||
| SI4058DY-T1-GE3-VB | VBsemi Elec | SO-8 | 9 | $0.6168 $0.7256 | ||
| SI4056DY-T1-GE3-VB | VBsemi Elec | SO-8 | 8 | $0.9693 $1.0203 | ||
| FDS3572-NL-VB | VBsemi Elec | SO-8 | 50 | $0.6425 $0.7558 | ||
| AO4292-VB | VBsemi Elec | SO-8 | 46 | $0.6500 $0.7646 | ||
| IRF7491TRPBF-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| SI4496DY-T1-E3-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| SM1A20NSK-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| SM1A21NSK-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| SSF1030B-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| SSG10N10-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| FDS4484-NL-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| SM1A06NSK-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| 10N10SC-VB | VBsemi Elec | SOP-8 | 0 | $ 1.003 | ||
| SI4484DY-T1-E3-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 | ||
| FDS3670-NL-VB | VBsemi Elec | SO-8 | 0 | $ 1.003 |