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onsemi FQD2N60CTF product image
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onsemi FQD2N60CTF

Manufacturer
onsemi
MPN
FQD2N60CTF
LCSC Part #
C3290881
Packaging
TO-252(DPAK)
Customer #
Key Attributes
44W 600V 1.9A 4.7Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS
Datasheetonsemi FQD2N60CTF
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252(DPAK)
Output Capacitance(Coss)25pF
Ciss-Input Capacitance235pF
Pd - Power Dissipation44W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)1.9A
Reverse Transfer Capacitance (Crss)5.6pF
RDS(on)4.7Ω@10V
Number1 N-channel
Gate Charge(Qg)12nC
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.

Features

AI Translation
  • 1.9A, 600V, R DS(on) = 4.7Ω at V GS = 10V
  • Low gate charge (typical 8.5nC)
  • Low C rss (typical 4.3pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

AI Translation
  • High-efficiency switch-mode power supplies
  • Active power factor correction
  • Electronic lamp ballasts based on half-bridge topology