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EDA ModelsEasyEDA
onsemi FDMC7678-L701
| Manufacturer | |
| MPN | FDMC7678-L701 |
| LCSC Part # | C3288672 |
| Packaging | MLP-8(3.3x3.3) |
| Customer # | |
| Key Attributes | 31W 30V 19.5A 3V 6.8mΩ@4.5V 1 N-channel N-Channel MLP-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet | onsemi FDMC7678-L701 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MLP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 820pF | |
| Pd - Power Dissipation | 31W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 19.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 6.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.41nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MLP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 820pF | |
| Pd - Power Dissipation | 31W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 19.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 6.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.41nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using an advanced power trench process specifically optimized to minimize on-resistance. The device is well-suited for power management and load switching applications commonly found in laptops and portable battery packs.
Features
AI Translation
- Maximum rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A
- Maximum rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A
- High-performance technology for ultra-low rDS(on)
- Lead-free, RoHS compliant
- MLP 3.3x3.3 package
Applications
AI Translation
- DC-DC step-down converter
- Notebook battery power management
- Load switch in notebooks
In-Stock: 19
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.9626 | $ 1.96 |
| 10+ | $ 1.9285 | $ 19.29 |
| 30+ | $ 1.9057 | $ 57.17 |
| 100+ | $ 1.883 | $ 188.30 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MLP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 820pF | |
| Pd - Power Dissipation | 31W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 19.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 6.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.41nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | MLP-8(3.3x3.3) | |
| Output Capacitance(Coss) | 820pF | |
| Pd - Power Dissipation | 31W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 19.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 6.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.41nF | |
| Gate Charge(Qg) | 39nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using an advanced power trench process specifically optimized to minimize on-resistance. The device is well-suited for power management and load switching applications commonly found in laptops and portable battery packs.
Features
AI Translation
- Maximum rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A
- Maximum rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A
- High-performance technology for ultra-low rDS(on)
- Lead-free, RoHS compliant
- MLP 3.3x3.3 package
Applications
AI Translation
- DC-DC step-down converter
- Notebook battery power management
- Load switch in notebooks
C3288672 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MX4007ALR | Wuxi Maxinmicro | PDFN3333-8L | 4,560 | $ 0.1071 | ||
| FH3040G6 | XIN FEI HONG | PDFN3.3x3.3-8L | 5,855 | $ 0.0771 | ||
| E030N6P0ML1 | Existar | PDFN3.3x3.3-8 | 710 | $0.0893 $0.1116 | ||
| YJQ50N03B | YANGJIE | DFN3333-8L | 1,110 | $ 0.2272 | ||
| CMSC075N04 | Cmos | DFN-8(3.3x3.3) | 300 | $0.2127 $0.2238 | ||
| DMT3003LFG-7 | DIODES | PowerDI3333-8 | 150 | $ 2.0273 | ||
| SKQ50N03BD | Shikues | DFN-8-EP(3.3x3.3) | 0 | $0.2442 $0.257 | ||
| FDMC0310AS-F127 | onsemi | WDFN-8(3.3x3.3) | 0 | $ 0.5269 | ||
| DMT8012LFG-7 | DIODES | POWERDI3333-8 | 0 | $ 1.5355 | ||
| E030N5P8ML1 | Existar | PDFN3.3x3.3-8 | 0 | $ 0.1414 |