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EDA ModelsEasyEDA
onsemi IRF9510R4941
| Manufacturer | |
| MPN | IRF9510R4941 |
| LCSC Part # | C3280668 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | P-Channel, Current:3.0A, Voltage:100V |
| Datasheet | onsemi IRF9510R4941 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 180pF | |
| Gate Charge(Qg) | 11nC | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 180pF | |
| Gate Charge(Qg) | 11nC | |
| Type | P-Channel |
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Introduction
AI Translation
This P-channel enhancement-mode silicon-gate power MOSFET is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for use in switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs.
Features
AI Translation
- 3.0A, 100V
- rDS(ON) = 1.200 Ω
- Single-pulse avalanche energy rated
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Applications
AI Translation
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- High-power bipolar switching transistor drivers requiring high speed and low gate drive power
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3202 | $ 0.32 |
| 200+ | $ 0.124 | $ 24.80 |
| 500+ | $ 0.1196 | $ 59.80 |
| 1,000+ | $ 0.1174 | $ 117.40 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 180pF | |
| Gate Charge(Qg) | 11nC | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 180pF | |
| Gate Charge(Qg) | 11nC | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel enhancement-mode silicon-gate power MOSFET is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for use in switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs.
Features
AI Translation
- 3.0A, 100V
- rDS(ON) = 1.200 Ω
- Single-pulse avalanche energy rated
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Applications
AI Translation
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- High-power bipolar switching transistor drivers requiring high speed and low gate drive power
C3280668 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IRF9510PBF | VISHAY | Similar | TO-220AB | 1,999 | $ 0.7194 | ||
| IRF9610PBF-VB | VBsemi Elec | Similar | TO-220AB | 4 | $0.8333 $0.8771 | ||
| IRF9520PBF | VISHAY | Similar | TO-220AB | 1 | $ 4.6075 | ||
| IRF9630PBF | VISHAY | Similar | TO-220AB | 7,558 | $0.5315 $0.5594 | ||
| IRF9630PBF-JSM | JSMSEMI | Similar | TO-220 | 202 | $0.6415 $0.6752 |
5 more alternative parts.View all substitutes