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onsemi FDC8884
| Manufacturer | |
| MPN | FDC8884 |
| LCSC Part # | C3280211 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 8A SuperSOT-6 |
| Datasheet | onsemi FDC8884 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 465pF | |
| Gate Charge(Qg) | 7.4nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 465pF | |
| Gate Charge(Qg) | 7.4nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced Power Trench process that has been optimized for rDS(on) switching performance.
Features
AI Translation
- High performance trench technology for extremely low rDS(on)
- Fast switching speed
- RoHS Compliant
Applications
AI Translation
- Primary Switch
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6125 | $ 0.61 |
| 10+ | $ 0.5151 | $ 5.15 |
| 30+ | $ 0.4744 | $ 14.23 |
| 100+ | $ 0.4225 | $ 42.25 |
| 500+ | $ 0.3997 | $ 199.85 |
| 1,000+ | $ 0.3851 | $ 385.10 |
Standard Packaging3000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 465pF | |
| Gate Charge(Qg) | 7.4nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 465pF | |
| Gate Charge(Qg) | 7.4nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced Power Trench process that has been optimized for rDS(on) switching performance.
Features
AI Translation
- High performance trench technology for extremely low rDS(on)
- Fast switching speed
- RoHS Compliant
Applications
AI Translation
- Primary Switch
C3280211 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SIL08N03-TP | MCC | SOT-23-6L | 2,455 | $ 0.1146 | ||
| SI3424CDV-T1-GE3 | VISHAY | TSOP-6 | 375 | $ 0.3453 | ||
| SSM6K818R,LF | TOSHIBA | TSOP-6 | 97 | $ 0.6396 | ||
| YJJ09N03A | YANGJIE | SOT-23-6L | 385 | $ 0.1617 | ||
| AO6402A | AOS | TSOP-6 | 5,791 | $ 0.1592 | ||
| SQ3410EV-T1_GE3 | VISHAY | TSOP-6 | 959 | $ 0.4817 | ||
| IRLTS6342TRPBF | Infineon | TSOP-6 | 2,985 | $ 0.475 | ||
| SI3410DV-T1-GE3 | VISHAY | TSOP-6-1.5mm | 0 | $ 2.0211 | ||
| SQ3418AEEV-T1_BE3 | VISHAY | TSOP-6 | 0 | $ 1.0893 | ||
| PJS6412_S1_00001 | PANJIT | SOT-23-6 | 0 | $ 0.0946 |