Ampleon ART700FHU
| Manufacturer | |
| MPN | ART700FHU |
| LCSC Part # | C3280002 |
| Packaging | SOT-1214A |
| Customer # | |
| Key Attributes | LDMOS Transistor, Current:800W, Voltage:177V |
| Datasheet | Ampleon ART700FHU |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | Ampleon | |
| Packaging | SOT-1214A | |
| Drain to Source Voltage | 177V | |
| Type | N-Channel | |
| RDS(on) | 171mΩ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -25℃~+175℃ | |
| Pd - Power Dissipation | 700W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.04pF | |
| Input Capacitance(Ciss) | 312pF | |
| Output Capacitance(Coss) | 97pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | Ampleon | |
| Packaging | SOT-1214A | |
| Drain to Source Voltage | 177V | |
| Type | N-Channel | |
| RDS(on) | 171mΩ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -25℃~+175℃ | |
| Pd - Power Dissipation | 700W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.04pF | |
| Input Capacitance(Ciss) | 312pF | |
| Output Capacitance(Coss) | 97pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor is designed for a wide range of applications including ISM, broadcast, and non-cellular communications. This unmatched transistor operates over a frequency range of 1 MHz to 450 MHz.
Features
AI Translation
- High breakdown voltage supports Class E operation at VDS = 48 V
- Suitable for VDS = 50 V and 55 V
- Qualified up to VDS = 55 V
- Characterized from 30 V to 55 V to support a wide range of applications
- Integrated dual-sided ESD protection for Class C operation with full transistor pinch-off
- Excellent ruggedness with no device performance degradation
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
Applications
AI Translation
- Industrial, Scientific, and Medical Applications
- Plasma generators
- MRI systems
- CO2 lasers
- Particle accelerators
- Broadcasting
- FM broadcasting
- VHF television
- Communications
- Non-cellular communications
- UHF radar
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 183.9161 | $ 183.92 |
| 200+ | $ 71.1743 | $ 14234.86 |
| 500+ | $ 68.6731 | $ 34336.55 |
| 1,000+ | $ 67.4372 | $ 67437.20 |
Standard Packaging20/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | Ampleon | |
| Packaging | SOT-1214A | |
| Drain to Source Voltage | 177V | |
| Type | N-Channel | |
| RDS(on) | 171mΩ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -25℃~+175℃ | |
| Pd - Power Dissipation | 700W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.04pF | |
| Input Capacitance(Ciss) | 312pF | |
| Output Capacitance(Coss) | 97pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | Ampleon | |
| Packaging | SOT-1214A | |
| Drain to Source Voltage | 177V | |
| Type | N-Channel | |
| RDS(on) | 171mΩ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -25℃~+175℃ | |
| Pd - Power Dissipation | 700W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.04pF | |
| Input Capacitance(Ciss) | 312pF | |
| Output Capacitance(Coss) | 97pF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Based on Advanced Rugged Technology (ART), this 700 W LDMOS RF power transistor is designed for a wide range of applications including ISM, broadcast, and non-cellular communications. This unmatched transistor operates over a frequency range of 1 MHz to 450 MHz.
Features
AI Translation
- High breakdown voltage supports Class E operation at VDS = 48 V
- Suitable for VDS = 50 V and 55 V
- Qualified up to VDS = 55 V
- Characterized from 30 V to 55 V to support a wide range of applications
- Integrated dual-sided ESD protection for Class C operation with full transistor pinch-off
- Excellent ruggedness with no device performance degradation
- High efficiency
- Excellent thermal stability
- Designed for broadband operation
Applications
AI Translation
- Industrial, Scientific, and Medical Applications
- Plasma generators
- MRI systems
- CO2 lasers
- Particle accelerators
- Broadcasting
- FM broadcasting
- VHF television
- Communications
- Non-cellular communications
- UHF radar
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

