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MICROCHIP 2N3719

Fabricante
MICROCHIP
N.º de pieza fab.
2N3719
Nº LCSC
C3201344
Emb.
TO-5
Número de Cliente
Atrib. clave
40V 25 PNP TO-5 Single Bipolar Transistors
Hoja de DatosMICROCHIP 2N3719
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
Cant.Prec. unit.(Solo como referencia)Importo total
1+$ 44.8373$ 44.84
200+$ 17.3523$ 3470.46
500+$ 16.7413$ 8370.65
1,000+$ 16.4404$ 16440.40
Encapsulado Estándar1/Full Bag
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Especificaciones del Producto

Todo
TipoDescripción
CategoríaDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
FabricanteMICROCHIP
Emb.TO-5
Current - Collector Cutoff10uA
Operating Temperature-65℃~+200℃
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain25
Pd - Power Dissipation6W
Current - Collector(Ic)-
typePNP
Vce Saturation(VCE(sat))1.5V
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Descripción

Traducción por IA

These power transistors are manufactured using PPC's double-diffused planar process. This technology produces high-voltage devices with excellent switching speed, frequency response, gain linearity, saturation voltage, high current gain, and safe operating area. They are suitable for commercial, industrial, and power switching, amplifier, and regulator applications. Ultrasonic wire bonding and controlled die attachment techniques further enhance the safe operating area capability and inherent reliability of these devices. The temperature range extends to 200°C, enabling reliable operation at high ambient temperatures, while hermetic packaging ensures maximum reliability and long service life.

Características

Traducción por IA
  • Collector-Emitter Sustaining Voltage: VCEO(SUS) δ = 40 Vdc (Min) — 2N3719
  • DC Current Gain: h_FE = 25 - 180 @ l_C = 1.0 Adc
  • Low Collector-Emitter Saturation Voltage: V_CE(sat) = 0.75 Vdc @ l_C = 1.0 Adc
  • High Current Gain-Bandwidth Product: f_T = 90 MHz (Typ)

Aplicaciones

Traducción por IA
  • High-speed switching
  • Medium-current switching
  • High-frequency amplification