MACOM MRF429
| Manufacturer | |
| MPN | MRF429 |
| LCSC Part # | C3198165 |
| Packaging | - |
| Customer # | |
| Key Attributes | 50V 10 16A NPN Bipolar RF Transistors RoHS |
| Datasheet | MACOM MRF429 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 10 | |
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 16A | |
| Transition frequency(fT) | - | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 10 |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 16A | |
| Transition frequency(fT) | - | |
| type | NPN |
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Introduction
AI Translation
This RF NPN silicon power transistor is primarily designed for high-voltage applications in the 2.0 to 30 MHz range, serving as a high-power linear amplifier. Suitable for marine and base station equipment.
Features
AI Translation
- Specified 50 V, 30 MHz characteristics:
- Output power = 150 W (peak envelope power)
- Minimum gain = 13 dB
- Efficiency = 45%
- Intermodulation distortion at 150 W (peak envelope power):
- IMD = -32 dB (maximum)
- Ballasted emitter resistors for excellent ruggedness
- 100% tested under 30:1 load mismatch at all phase angles
- VSWR at 150 W CW
Applications
AI Translation
Marine equipment, base station equipment
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 52.358 | $ 52.36 |
| 200+ | $ 20.2631 | $ 4052.62 |
| 500+ | $ 19.5499 | $ 9774.95 |
| 1,000+ | $ 19.198 | $ 19198.00 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 10 | |
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 16A | |
| Transition frequency(fT) | - | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors | |
| Manufacturer | MACOM | |
| Packaging | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 10 |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Current - Collector(Ic) | 16A | |
| Transition frequency(fT) | - | |
| type | NPN |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This RF NPN silicon power transistor is primarily designed for high-voltage applications in the 2.0 to 30 MHz range, serving as a high-power linear amplifier. Suitable for marine and base station equipment.
Features
AI Translation
- Specified 50 V, 30 MHz characteristics:
- Output power = 150 W (peak envelope power)
- Minimum gain = 13 dB
- Efficiency = 45%
- Intermodulation distortion at 150 W (peak envelope power):
- IMD = -32 dB (maximum)
- Ballasted emitter resistors for excellent ruggedness
- 100% tested under 30:1 load mismatch at all phase angles
- VSWR at 150 W CW
Applications
AI Translation
Marine equipment, base station equipment
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

