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HUASHUO HSS4P06 product image
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HUASHUO HSS4P06

Manufacturer
HUASHUOAsian Brands
MPN
HSS4P06
LCSC Part #
C2987709
Packaging
SOT-23L
Customer #
Key Attributes
MOSFET P-CH 60V 4A SOT-23
DatasheetHUASHUO HSS4P06
RoHS Compliance1 documents available
In-Stock: 3,710
3,710 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1506$ 0.75
50+$ 0.1231$ 6.16
150+$ 0.1094$ 16.41
500+$ 0.0991$ 49.55
3,000+$ 0.0823$ 246.90
6,000+$ 0.0782$ 469.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-23L
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Output Capacitance(Coss)89pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.4W
RDS(on)90mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number1 P-Channel
Input Capacitance(Ciss)831pF
Gate Charge(Qg)20nC@10V
TypeP-Channel
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Introduction

AI Translation

HSS4P06 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSS4P06 complies with RoHS and green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • 100% guaranteed avalanche capability (EAS)
  • Green & eco-friendly devices available
  • Ultra-low gate charge
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology