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Modelos EDAEasyEDA
VBsemi Elec HFS2N60U-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | HFS2N60U-VB |
| Nº LCSC | C29779397 |
| Emb. | TO-220F |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 650V 2A TO-220F |
| Hoja de Datos | VBsemi Elec HFS2N60U-VB |
| Piezas alternativas | 19 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 912pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| RDS(on) | 4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 912pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| RDS(on) | 4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
En stock: 10
10 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 0.5303$ 0.4508 | $ 0.45 |
| 10+ | $ 0.416$ 0.3536 | $ 3.54 |
| 50+ | $ 0.3668$ 0.3118 | $ 15.59 |
| 100+ | $ 0.3065$ 0.2606 | $ 26.06 |
| 500+ | $ 0.2795$ 0.2376 | $ 118.80 |
| 1,000+ | $ 0.2636$ 0.2241 | $ 224.10 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 912pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| RDS(on) | 4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 912pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| RDS(on) | 4Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
C29779397 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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