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ST STL210N4F7AG
| Manufacturer | |
| MPN | STL210N4F7AG |
| LCSC Part # | C2971013 |
| Packaging | PowerFLAT-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 120A PowerFLAT-8(5x6) |
| Datasheet | ST STL210N4F7AG |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-8(5x6) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.24nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 1.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.6nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-8(5x6) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.24nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 1.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.6nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
AI Translation
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low C_rss/C_iss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package
Applications
AI Translation
- Switching applications
In-Stock: 1,196
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.4075 | $ 1.41 |
| 10+ | $ 1.2851 | $ 12.85 |
| 30+ | $ 1.2083 | $ 36.25 |
| 100+ | $ 1.13 | $ 113.00 |
| 500+ | $ 1.094 | $ 547.00 |
| 1,000+ | $ 1.0777 | $ 1077.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-8(5x6) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.24nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 1.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.6nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | PowerFLAT-8(5x6) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.24nF | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 1.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.6nF | |
| Gate Charge(Qg) | 43nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
AI Translation
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low C_rss/C_iss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package
Applications
AI Translation
- Switching applications
C2971013 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SP40N01GHNK | Siliup | PDFN-8L(5x6) | 1,256 | $ 0.6474 | ||
| AGMH4012A-CP | AGMSEMI | PDFN-8(5x6) | 18 | $ 0.5621 | ||
| STL120N10F8 | ST | PowerFLAT(5x6) | 34 | $ 3.8017 | ||
| STL125N10F8AG | ST | PowerFLAT5x6 | 15 | $ 6.2808 | ||
| STLD200N4F6AG | ST | PowerFLAT(5x6) | 10 | $ 8.2158 | ||
| TPH2R608NH,L1Q(M | TOSHIBA | SOP-8-Advance(5x6) | 23,349 | $ 1.213 | ||
| JSM053N10QG5H | JSMSEMI | DFN-8L(5x6) | 4,916 | $ 0.4856 | ||
| SP40N01ABGHNP | Siliup | PDFN5X6-8L | 74 | $0.6363 $0.6697 | ||
| STL210N4F7 | ST | DFN-8(4.9x5.8) | 0 | $ 2.2177 | ||
| NTMFS2D5N08XT1G | onsemi | SO-8FL | 0 | $ 2.398 |