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ST STW78N65M5
| Manufacturer | |
| MPN | STW78N65M5 |
| LCSC Part # | C2970447 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 69A TO-247 |
| Datasheet | ST STW78N65M5 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 69A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 203nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 69A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 203nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
AI Translation
- Designed for automotive applications and AEC-Q101 qualified
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Applications
AI Translation
- Switching applications
Every Order Guarantee
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In-Stock: 3
3 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 32.9409 | $ 32.94 |
| 10+ | $ 31.8833 | $ 318.83 |
| 30+ | $ 30.0523 | $ 901.57 |
| 90+ | $ 28.4553 | $ 2560.98 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 69A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 203nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 210pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 69A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 32mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9nF | |
| Gate Charge(Qg) | 203nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
AI Translation
- Designed for automotive applications and AEC-Q101 qualified
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| STWA88N65M5 | ST | Similar | TO-247 | 1 | $ 15.6731 | ||
| STW88N65M5 | ST | Similar | TO-247 | 203 | $ 9.2101 | ||
| TPW60R028DFD | WUXI UNIGROUP MICRO | Similar | TO-247S | 2 | $ 6.2549 | ||
| RSF65R035W | REASUNOS | Similar | TO-247 | 30 | $4.8298 $5.0839 | ||
| CI72N65 | Tokmas | Similar | TO-247-3 | 53 | $2.1344 $3.0491 |
5 more alternative parts.View all substitutes