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ST STPSC20065GY-TR
| Manufacturer | |
| MPN | STPSC20065GY-TR |
| LCSC Part # | C2965441 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 1 Independent 650V 1.45V@20A 20A D2PAK Single Diodes RoHS |
| Datasheet | ST STPSC20065GY-TR |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 300uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 400A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 300uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 400A |
Introduction
This silicon carbide diode is a high-performance power Schottky diode. Manufactured on a silicon carbide substrate, the wide bandgap material enables a Schottky diode structure rated at 650V. Due to the Schottky structure, there is no recovery phenomenon at turn-off, ringing is negligible, and the minimal capacitive turn-off behavior is temperature-independent. This diode is particularly suited for PFC applications, delivering enhanced performance under hard-switching conditions, with high forward surge capability ensuring robust performance during transient phases.
Features
- AEC-Q101 compliant
- No reverse recovery charge within operating current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- ECOPACK®2 compliant component
- PPAP supported
- Junction temperature (Tj) operating range: -40°C to 175°C
- Cooling method: conduction (C)
- Epoxy meets UL94 V0
- TO-220AC package recommended torque: 0.55 N·m, maximum torque: 0.7 N·m
- DO-247 package recommended torque: 0.8 N·m, maximum torque: 1 N·m
- Available in TO-220AC, DO-247, and D²PAK packages
Applications
- PFC applications
- Hard switching conditions
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 8.6972 | $ 8.70 |
| 10+ | $ 7.4018 | $ 74.02 |
| 30+ | $ 6.613 | $ 198.39 |
| 100+ | $ 5.952 | $ 595.20 |
Standard Packaging1000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 300uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 400A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.45V@20A | |
| Reverse Leakage Current (Ir) | 300uA@650V | |
| Current - Rectified | 20A | |
| Non-Repetitive Peak Forward Surge Current | 400A |
Introduction
This silicon carbide diode is a high-performance power Schottky diode. Manufactured on a silicon carbide substrate, the wide bandgap material enables a Schottky diode structure rated at 650V. Due to the Schottky structure, there is no recovery phenomenon at turn-off, ringing is negligible, and the minimal capacitive turn-off behavior is temperature-independent. This diode is particularly suited for PFC applications, delivering enhanced performance under hard-switching conditions, with high forward surge capability ensuring robust performance during transient phases.
Features
- AEC-Q101 compliant
- No reverse recovery charge within operating current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- ECOPACK®2 compliant component
- PPAP supported
- Junction temperature (Tj) operating range: -40°C to 175°C
- Cooling method: conduction (C)
- Epoxy meets UL94 V0
- TO-220AC package recommended torque: 0.55 N·m, maximum torque: 0.7 N·m
- DO-247 package recommended torque: 0.8 N·m, maximum torque: 1 N·m
- Available in TO-220AC, DO-247, and D²PAK packages
Applications
- PFC applications
- Hard switching conditions
C2965441 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STPSC20H12G2-TR | ST | D2PAK-HV | 2 | $ 10.1428 | ||
| SAIDK10S65C5ATMA1 | JSMSEMI | TO-263 | 100 | $ 2.5543 | ||
| SICB0860P-HXY | HXY MOSFET | TO-263 | 24 | $1.2769 $1.5961 | ||
| LSIC2SD065D08A-HXY | HXY MOSFET | TO-263 | 24 | $1.5320 $1.915 | ||
| YJD106520BQG3Q | YANGJIE | TO-263 | 589 | $ 4.562 | ||
| GK08D650G | GOODWORK | TO-263 | 152 | $0.6859 $0.7219 | ||
| HFFSB10120AF085 | HXY MOSFET | TO-263 | 104 | $4.6212 $4.8644 | ||
| S3D10065G-HXY | HXY MOSFET | TO-263 | 23 | $1.2290 $1.3655 | ||
| BCB120S20D2 | Bestirpower | TO-263-2L | 130 | $ 1.298 | ||
| C6D10065G | Wolfspeed | TO-263-2 | 0 | $ 3.4328 |