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ST SCT10N120AG
| Manufacturer | |
| MPN | SCT10N120AG |
| LCSC Part # | C2965411 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mQ |
| Datasheet | ST SCT10N120AG |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 690mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 290pF | |
| Gate Charge(Qg) | 22nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 690mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 290pF | |
| Gate Charge(Qg) | 22nC | |
| Type | N-Channel |
Introduction
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Applications
- Motor drives
- EV chargers
- High voltage DC-DC converters
- Switch mode power supplies
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 9.9691 | $ 9.97 |
| 10+ | $ 9.6545 | $ 96.55 |
Standard Packaging30/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 690mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 290pF | |
| Gate Charge(Qg) | 22nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF | |
| RDS(on) | 690mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 290pF | |
| Gate Charge(Qg) | 22nC | |
| Type | N-Channel |
Introduction
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Applications
- Motor drives
- EV chargers
- High voltage DC-DC converters
- Switch mode power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BCW120N160W1 | Bestirpower | TO-247-3L | 83 | $ 1.8912 | ||
| BCW120N80M1 | Bestirpower | TO-247-3 | 109 | $ 2.4386 | ||
| HC3M0075120D | HXY MOSFET | TO-247-3L | 20 | $5.0770 $5.3442 | ||
| MGW40N120N | Megain | TO-247-3 | 54 | $ 2.8786 | ||
| SP40N120CTF | Siliup | TO-247 | 44 | $ 2.8259 | ||
| HT63N1200ADZ | HTCSEMI | TO-247-3 | 30 | $5.8654 $8.3791 | ||
| C3M0032120D | Wolfspeed | TO-247-3 | 10 | $ 18.9709 | ||
| SCT10N120 | ST | HiP-247 | 0 | $ 8.9148 | ||
| SG1M160120D | Sichainsemi | TO-247-3L | 0 | $ 1.8625 | ||
| AIMW120R080M1XKSA1 | Infineon | TO-247-3-41 | 0 | $ 20.1246 |