Infineon/CYPRESS CY62158CV30LL-70BAI

The CY62158CV25/30/33 is a high-performance CMOS SRAM organized as 1024K words × 8 bits. The device employs advanced circuit design to deliver ultra-low active current, making it suitable for portable applications such as cellular phones to provide extended battery life. It features an automatic power-down function that reduces power consumption by 80% when addresses are not switching. When deselected (CE1 high or CE2 low), the device enters standby mode, reducing power consumption by more than 99%. Write operations are performed by asserting Chip Enable 1 and Write Enable inputs low and Chip Enable 2 high, with data written to the location specified by the address pins via eight I/O pins. Read operations are performed by asserting Chip Enable 1 and Output Enable low, Chip Enable 2 high, and forcing Write Enable high, at which point the contents of the memory cell specified by the address pins appear on the I/O pins. The eight I/O pins are in a high-impedance state when the device is deselected, the output is disabled, or during write operations. The device is available in a 48-ball FBGA package.

• High Speed: 55 ns and 70 ns availability
• Voltage Range: CY62158CV25: 2.2V–2.7V; CY62158CV30: 2.7V–3.3V; CY62158CV33: 3.0V–3.6V
• Ultra-Low Active Power: typical active current 1.5 mA @ f = 1 MHz; typical active current 5.5 mA @ f = fmax (70 ns speed)
• Low standby power
• Easy memory expansion with CE1, CE2, and OE features
• Automatic power-down on deselection

• Portable applications
• Mobile phones