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Infineon/CYPRESS S29GL256S10DHV020 product image
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Infineon/CYPRESS S29GL256S10DHV020

Manufacturer
MPN
S29GL256S10DHV020
LCSC Part #
C2948810
Packaging
LBGA-64
Customer #
Key Attributes
256Mbit 2.7V~3.6V Parallel LBGA-64 Memory RoHS
DatasheetInfineon/CYPRESS S29GL256S10DHV020
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6324$ 0.63
260+$ 0.2449$ 63.67
520+$ 0.2368$ 123.14
1,040+$ 0.2319$ 241.18
Standard Packaging260/Full Tray
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingLBGA-64
Operating Temperature-
FeaturesPower-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size256Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)100ns
Page Programming Time (Tpp)-
Standby Supply Current100uA
InterfaceParallel

Introduction

AI Translation

The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Features

AI Translation
  • 65 nm MirrorBit Eclipse Technology
  • Single supply (vcc) for read / program / erase (2.7V to 3.6V)
  • Versatile I/O Feature – Wide I/O voltage range (V10): 1.65V to VCC
  • x16 data bus
  • Asynchronous 32-byte Page read
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Sector Erase – Uniform 128-kbyte sectors
  • Suspend and Resume commands for Program and Erase operations
  • Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced Sector Protection (ASP) – Volatile and no