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HUASHUO HSBB6113
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSBB6113 |
| LCSC Part # | C2903563 |
| Packaging | PRPAK3x3-8L |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 13A PRPAK3x3-8L |
| Datasheet | HUASHUO HSBB6113 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 90mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 11.8nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| RDS(on) | 90mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 11.8nC@4.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSBB6113 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSBB6113 is RoHS and green product compliant, 100% EAS guaranteed, and fully qualified through reliability certification.
Features
AI Translation
- 100% EAS guaranteed
- Green device available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 17,745
17,745 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2953 | $ 1.48 |
| 50+ | $ 0.2375 | $ 11.88 |
| 150+ | $ 0.2127 | $ 31.91 |
| 500+ | $ 0.1818 | $ 90.90 |
| 3,000+ | $ 0.1535 | $ 460.50 |
| 6,000+ | $ 0.1452 | $ 871.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 90mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 11.8nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| RDS(on) | 90mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.08nF | |
| Gate Charge(Qg) | 11.8nC@4.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSBB6113 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSBB6113 is RoHS and green product compliant, 100% EAS guaranteed, and fully qualified through reliability certification.
Features
AI Translation
- 100% EAS guaranteed
- Green device available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C2903563 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |