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TI LMG1210RVRT
| Manufacturer | |
| MPN | LMG1210RVRT |
| LCSC Part # | C2862667 |
| Packaging | WQFN-19(3x4) |
| Customer # | |
| Key Attributes | 200V, 1.5A, 3A half-bridge MOSFET and GaNFET drivers with adjustable dead-time (suitable for applications with operating frequencies up to 50MHz) |
| Datasheet | TI LMG1210RVRT |
| RoHS Compliance | 2 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | TI | |
| Packaging | WQFN-19(3x4) | |
| Input Logic Level - Low | 700mV~1.3V | |
| Low Level Delay Time | 10ns | |
| High Level Delay Time | 10ns | |
| Quiescent Current | 300uA | |
| Input Logic Level - High | 1.7V~2.45V | |
| Voltage - Supply | 6V~18V | |
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 3A | |
| Rise Time | 500ps | |
| Fall Time | 2.3ns | |
| Features | Dead-time control | |
| Current - Output High(IOH) | 1.5A | |
| Load Type | MOSFET |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | TI | |
| Packaging | WQFN-19(3x4) | |
| Input Logic Level - Low | 700mV~1.3V | |
| Low Level Delay Time | 10ns | |
| High Level Delay Time | 10ns | |
| Quiescent Current | 300uA | |
| Input Logic Level - High | 1.7V~2.45V | |
| Voltage - Supply | 6V~18V |
| Type | Description | |
|---|---|---|
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 3A | |
| Rise Time | 500ps | |
| Fall Time | 2.3ns | |
| Features | Dead-time control | |
| Current - Output High(IOH) | 1.5A | |
| Load Type | MOSFET |
Introduction
The LMG1210 is a 200V half-bridge MOSFET and GaN FET driver developed for applications demanding ultra-high frequency and high efficiency. It features adjustable dead time, ultra-short propagation delay, and 3.4ns high-side/low-side matching to optimize system efficiency. The device also incorporates an internal LDO to ensure a 5V gate driver voltage regardless of supply voltage.
To achieve optimal performance across various applications, the LMG1210 allows designers to select the optimal bootstrap diode for charging the high-side bootstrap capacitor. When the low side is not conducting, an internal switch disables the bootstrap diode to effectively prevent high-side bootstrap overcharging and minimize reverse recovery charge. Additional parasitic capacitance on the GaN FET is minimized to less than 1pF to reduce additional switching losses.
The LMG1210 supports two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM, each output is independently controlled by a dedicated input. In PWM mode, two complementary output signals are generated from a single input, with user-adjustable dead time per edge from 0ns to 20ns. The LMG1210 operates over a wide temperature range of -40°C to 125°C and is available in a low-inductance WQFN package.
Features
- Operating frequency up to 50MHz
- 10ns typical propagation delay
- 3.4ns high-side to low-side matching
- 4ns minimum pulse width
- Two control input options – single PWM input with adjustable dead time, independent input mode
- 1.5A peak source current and 3A peak sink current
- External bootstrap diode for flexibility
- Internal LDO for voltage rail adaptability
- High 300V/ns CMTI
- HO to LO capacitance less than 1pF
- UVLO and over-temperature protection
- Low-inductance WQFN package
Applications
- High-speed DC/DC converters
- RF envelope tracking
- Class-D audio amplifiers
- Class-E wireless charging
- High-precision motor control
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | TI | |
| Packaging | WQFN-19(3x4) | |
| Input Logic Level - Low | 700mV~1.3V | |
| Low Level Delay Time | 10ns | |
| High Level Delay Time | 10ns | |
| Quiescent Current | 300uA | |
| Input Logic Level - High | 1.7V~2.45V | |
| Voltage - Supply | 6V~18V | |
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 3A | |
| Rise Time | 500ps | |
| Fall Time | 2.3ns | |
| Features | Dead-time control | |
| Current - Output High(IOH) | 1.5A | |
| Load Type | MOSFET |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | TI | |
| Packaging | WQFN-19(3x4) | |
| Input Logic Level - Low | 700mV~1.3V | |
| Low Level Delay Time | 10ns | |
| High Level Delay Time | 10ns | |
| Quiescent Current | 300uA | |
| Input Logic Level - High | 1.7V~2.45V | |
| Voltage - Supply | 6V~18V |
| Type | Description | |
|---|---|---|
| Operating Temperature | -40℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 3A | |
| Rise Time | 500ps | |
| Fall Time | 2.3ns | |
| Features | Dead-time control | |
| Current - Output High(IOH) | 1.5A | |
| Load Type | MOSFET |
Introduction
The LMG1210 is a 200V half-bridge MOSFET and GaN FET driver developed for applications demanding ultra-high frequency and high efficiency. It features adjustable dead time, ultra-short propagation delay, and 3.4ns high-side/low-side matching to optimize system efficiency. The device also incorporates an internal LDO to ensure a 5V gate driver voltage regardless of supply voltage.
To achieve optimal performance across various applications, the LMG1210 allows designers to select the optimal bootstrap diode for charging the high-side bootstrap capacitor. When the low side is not conducting, an internal switch disables the bootstrap diode to effectively prevent high-side bootstrap overcharging and minimize reverse recovery charge. Additional parasitic capacitance on the GaN FET is minimized to less than 1pF to reduce additional switching losses.
The LMG1210 supports two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM, each output is independently controlled by a dedicated input. In PWM mode, two complementary output signals are generated from a single input, with user-adjustable dead time per edge from 0ns to 20ns. The LMG1210 operates over a wide temperature range of -40°C to 125°C and is available in a low-inductance WQFN package.
Features
- Operating frequency up to 50MHz
- 10ns typical propagation delay
- 3.4ns high-side to low-side matching
- 4ns minimum pulse width
- Two control input options – single PWM input with adjustable dead time, independent input mode
- 1.5A peak source current and 3A peak sink current
- External bootstrap diode for flexibility
- Internal LDO for voltage rail adaptability
- High 300V/ns CMTI
- HO to LO capacitance less than 1pF
- UVLO and over-temperature protection
- Low-inductance WQFN package
Applications
- High-speed DC/DC converters
- RF envelope tracking
- Class-D audio amplifiers
- Class-E wireless charging
- High-precision motor control
C2862667 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |