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Infineon IRF9510PBF
| Manufacturer | |
| MPN | IRF9510PBF |
| LCSC Part # | C2625 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | P-Channel, Current:4.0A, Voltage:100V |
| Datasheet | Infineon IRF9510PBF |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Type | P-Channel |
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Introduction
AI Translation
The third generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB universally recognized throughout the industry.
Features
AI Translation
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7198 | $ 0.72 |
| 10+ | $ 0.6873 | $ 6.87 |
| 50+ | $ 0.6661 | $ 33.31 |
| 100+ | $ 0.645 | $ 64.50 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The third generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB universally recognized throughout the industry.
Features
AI Translation
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
C2625 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRF9520PBF | VISHAY | TO-220AB | 1 | $ 4.6075 | ||
| IRF9510PBF-BE3 | VISHAY | TO-220AB | 0 | $ 0.5848 | ||
| IRFI9530GPBF | VISHAY | TO-220-3 | 0 | $ 1.6198 | ||
| IRF9632 | TI | TO-220AB | 0 | $ 1.5677 | ||
| IRFI9640GPBF | VISHAY | TO-220-3 | 0 | $ 2.6839 | ||
| IRF9633 | TI | TO-220AB | 0 | $ 0.8394 | ||
| IRF9522 | TI | TO-220AB | 0 | $ 0.8394 | ||
| IRF9520NPBF | Infineon | TO-220AB | 0 | $ 0.7404 | ||
| VBM2251K | VBsemi Elec | TO-220AB | 0 | $ 1.3883 | ||
| IRF9520PBF-BE3 | VISHAY | TO-220AB | 0 | $ 0.6774 |