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UTC 1N65G-AA3-R product image
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UTC 1N65G-AA3-R

Manufacturer
UTCAsian Brands
MPN
1N65G-AA3-R
LCSC Part #
C258269
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 650V 1.2A SOT-223
DatasheetUTC 1N65G-AA3-R
RoHS Compliance1 documents available
In-Stock: 4,935
4,935 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1299$ 0.65
50+$ 0.1191$ 5.96
150+$ 0.1138$ 17.07
500+$ 0.1097$ 54.85
2,500+$ 0.1065$ 266.25
5,000+$ 0.1049$ 524.50
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUTC
PackagingSOT-223
Output Capacitance(Coss)25pF
Pd - Power Dissipation8W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)1.2A
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)12.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)150pF
Gate Charge(Qg)6nC@10V
Vgs±30V
TypeN-Channel
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Introduction

AI Translation

The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Features

AI Translation
  • RDS(ON) < 12.5Ω @ VGS = 10V, ID = 0.6A
  • Ultra Low gate charge (typical 5.0nC)
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness

Applications

AI Translation
  • power supplies
  • PWM motor controls
  • high efficient DC to DC converters
  • bridge circuits