onsemi FQPF20N06
| Manufacturer | |
| MPN | FQPF20N06 |
| LCSC Part # | C243106 |
| Packaging | TO-220FPAB-3 |
| Customer # | |
| Key Attributes | N-Channel, Current:15A, Voltage:60V |
| Datasheet | onsemi FQPF20N06 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Introduction
This N-channel enhancement mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor controls, and variable switching power supply applications.
Features
- 15 A, 60 V, RDS(on) = 60 mΩ (max) @ VGS = 10 V, ID = 7.5 A
- Low gate charge (typical 11.5 nC)
- Low Crss (typical 25 pF)
- 100% avalanche tested
- Maximum junction temperature rating 175°C
Applications
- Switching mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power supply applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.1454 | $ 1.15 |
| 10+ | $ 1.1292 | $ 11.29 |
| 50+ | $ 1.1194 | $ 55.97 |
| 100+ | $ 1.1097 | $ 110.97 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220FPAB-3 | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 590pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Introduction
This N-channel enhancement mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor controls, and variable switching power supply applications.
Features
- 15 A, 60 V, RDS(on) = 60 mΩ (max) @ VGS = 10 V, ID = 7.5 A
- Low gate charge (typical 11.5 nC)
- Low Crss (typical 25 pF)
- 100% avalanche tested
- Maximum junction temperature rating 175°C
Applications
- Switching mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power supply applications
C243106 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| KNF20N65A | KIA Semicon Tech | TO-220F | 20 | $ 0.8082 | ||
| CMF18N20 | Cmos | TO-220F | 57 | $0.3877 $0.4081 | ||
| CMF330N15 | Cmos | TO-220F | 20 | $0.4781 $0.5032 | ||
| TSF18N50MD | Truesemi | TO-220F | 24 | $ 0.7651 | ||
| TSF20N50MR | Truesemi | TO-220F-3 | 58 | $ 0.9551 | ||
| IRFI640GPBF-VB | VBsemi Elec | TO-220F | 1 | $ 0.9212 | ||
| STF20NF20 | ST | TO-220FPAB-3 | 4 | $ 2.0931 | ||
| SK20N65A-TF | Shikues | TO-220F | 0 | $0.9990 $1.0515 | ||
| SM2A08NSFP-VB | VBsemi Elec | TO-220F | 0 | $ 1.1493 | ||
| 2SK2965-VB | VBsemi Elec | TO-220F | 0 | $1.0570 $1.1126 |



