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WILLSEMI WNM6001-3/TR
| Manufacturer | WILLSEMIAsian Brands |
| MPN | WNM6001-3/TR |
| LCSC Part # | C239589 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 0.5A SOT-23 |
| Datasheet | WILLSEMI WNM6001-3/TR |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 7.33pF | |
| Pd - Power Dissipation | 690mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 500mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| RDS(on) | 1.7Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 23.37pF | |
| Gate Charge(Qg) | 1.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 7.33pF | |
| Pd - Power Dissipation | 690mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 500mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| RDS(on) | 1.7Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 23.37pF | |
| Gate Charge(Qg) | 1.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6001 is Pb-free and Halogen-free.
Features
AI Translation
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package SOT-23
Applications
AI Translation
- Driver for Relay, Solenoid, Motor, LED etc.
- DC-DC converter circuit
- Power Switch
- Load Switch
- Charging
In-Stock: 19,960
19,960 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.029 | $ 0.58 |
| 200+ | $ 0.0226 | $ 4.52 |
| 600+ | $ 0.019 | $ 11.40 |
| 3,000+ | $ 0.0169 | $ 50.70 |
| 9,000+ | $ 0.015 | $ 135.00 |
| 21,000+ | $ 0.014 | $ 294.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 7.33pF | |
| Pd - Power Dissipation | 690mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 500mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| RDS(on) | 1.7Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 23.37pF | |
| Gate Charge(Qg) | 1.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | WILLSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 7.33pF | |
| Pd - Power Dissipation | 690mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 500mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| RDS(on) | 1.7Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 23.37pF | |
| Gate Charge(Qg) | 1.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6001 is Pb-free and Halogen-free.
Features
AI Translation
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package SOT-23
Applications
AI Translation
- Driver for Relay, Solenoid, Motor, LED etc.
- DC-DC converter circuit
- Power Switch
- Load Switch
- Charging
C239589 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WNM01N10-3/TR | WILLSEMI | SOT-23 | 770 | $ 0.1538 | ||
| WNM4009-3/TR | WILLSEMI | SOT-23 | 4,180 | $ 0.1098 |