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Infineon IMBG65R007M2HXTMA1

Manufacturer
Infineon
MPN
IMBG65R007M2HXTMA1
LCSC Part #
C23402827
Packaging
TO-263-7
Customer #
Key Attributes
SICFET 650V 238A TO-263-7
DatasheetInfineon IMBG65R007M2HXTMA1
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-7
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)238A
Output Capacitance(Coss)613pF
Ciss-Input Capacitance6.359nF
Pd - Power Dissipation789W
Reverse Transfer Capacitance (Crss)35pF
RDS(on)8.5mΩ
Number1 N-channel
Gate Charge(Qg)179nC
TypeN-Channel
Gate Threshold Voltage (Vgs(th))5.6V
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Introduction

AI Translation

Built on Infineon's robust 2nd generation Silicon Carbide trench technology: the 650 V CoolSiCTM MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever-growing system and market needs.

Features

AI Translation
  • Ultra-low switching losses
  • Benchmark gate threshold voltage, VGS(th)=4.5 V
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • .XT interconnection technology for best-in-class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives