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HXY MOSFET HSM12T1G product image
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HXY MOSFET HSM12T1G

Manufacturer
HXY MOSFETAsian Brands
MPN
HSM12T1G
LCSC Part #
C22439749
Packaging
SOT-23
Customer #
Key Attributes
ESD DIODE 12VWM 32VC SOT-23
DatasheetHXY MOSFET HSM12T1G
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 2,580
2,580 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0345$ 0.0321$ 0.64
200+$ 0.0272$ 0.0253$ 5.06
600+$ 0.0232$ 0.0216$ 12.96
3,000+$ 0.0207$ 0.0193$ 57.90
9,000+$ 0.0187$ 0.0174$ 156.60
21,000+$ 0.0175$ 0.0163$ 342.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingSOT-23
Clamping Voltage32V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)11A
Peak Pulse Power Dissipation (Ppp)350W@8/20us
Voltage - Breakdown13.3V
Number of Channels2
typeESD
Reverse Leakage Current (Ir)1uA
PolarityUnidirectional
Reverse Stand-Off Voltage (Vrwm)12V

Introduction

AI Translation

The HSM12T1G protects sensitive semiconductor components from damage or disruption caused by ESD and other voltage-induced transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide best-in-class protection for designs exposed to ESD. It offers designers the flexibility to protect two unidirectional lines in applications where arrays are not suitable.

Features

AI Translation
  • Transient protection for high-speed data lines: IEC 61000-4-2 (ESD) ±30kV (contact discharge) ±30kV (air discharge); IEC 61000-4-4 (EFT) 40A (5/50 ns)
  • Peak power dissipation: 350W (8/20us)
  • Working voltage: 12V
  • Protects one bidirectional line or two unidirectional lines
  • Low clamp voltage
  • Low leakage current