GigaDevice Semicon Beijing GD9FS1G8F3AMGI
| Manufacturer | GigaDevice Semicon BeijingAsian Brands |
| MPN | GD9FS1G8F3AMGI |
| LCSC Part # | C21296417 |
| Packaging | - |
| Customer # | |
| Key Attributes | Memory |
| Datasheet | GigaDevice Semicon Beijing GD9FS1G8F3AMGI |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | GigaDevice Semicon Beijing | |
| Packaging | - | |
| Features | - |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | GigaDevice Semicon Beijing |
| Type | Description | |
|---|---|---|
| Packaging | - | |
| Features | - |
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Features
AI Translation
- Power Supply Voltage: 2.7V~3.6V
- High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
- Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
- Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
- Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
- Power Supply Voltage: 1.7V~2.0V
- High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
- Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
- Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
- Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.0247 | $ 3.02 |
| 200+ | $ 1.2069 | $ 241.38 |
| 500+ | $ 1.1669 | $ 583.45 |
| 960+ | $ 1.147 | $ 1101.12 |
Standard Packaging960/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | GigaDevice Semicon Beijing | |
| Packaging | - | |
| Features | - |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | GigaDevice Semicon Beijing |
| Type | Description | |
|---|---|---|
| Packaging | - | |
| Features | - |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Power Supply Voltage: 2.7V~3.6V
- High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
- Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
- Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
- Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
- Power Supply Voltage: 1.7V~2.0V
- High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
- Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
- Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
- Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
C21296417 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

