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VBsemi Elec IPB010N06N-VB

Manufacturer
VBsemi ElecAsian Brands
MPN
IPB010N06N-VB
LCSC Part #
C21264515
Packaging
TO-263-7L
Customer #
Key Attributes
60V 200A 375W 2mΩ@10V 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs
DatasheetVBsemi Elec IPB010N06N-VB
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-263-7L
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Output Capacitance(Coss)1.77nF
Current - Continuous Drain(Id)200A
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss)1.05nF
RDS(on)2mΩ@10V
Number1 N-channel
Gate Charge(Qg)300nC@10V
Gate Threshold Voltage (Vgs(th))3.5V
TypeN-Channel

Features

AI Translation
  • Trench field-effect transistor (TrenchFET) power MOSFET
  • Low thermal resistance package
  • 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
  • RoHS compliant
  • Halogen-free

Applications

AI Translation
  • Server and telecom power supplies - Switch Mode Power Supplies (SMPS) - Power Factor Correction (PFC) - Lighting - High Intensity Discharge (HID) lamps - Fluorescent lamp ballast lighting - Industrial applications