micron MT25QU256ABA1EW7-0SIT
| Manufacturer | |
| MPN | MT25QU256ABA1EW7-0SIT |
| LCSC Part # | C2063145 |
| Packaging | WPDFN-8(5x6) |
| Customer # | |
| Key Attributes | 256Mb, 1.8V Multiple I/O Serial Flash Memory |
| Datasheet | micron MT25QU256ABA1EW7-0SIT |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | WPDFN-8(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 120us | |
| Standby Supply Current | - | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | WPDFN-8(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 120us | |
| Standby Supply Current | - | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols: Extended, Dual and Quad I/O both STR and DTR
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Additional reset pin for selected part numbers
- 3-byte and 4-byte address modes – enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory – Readable and user-lockable – Permanent lock with PROGRAM OTP command
- Erase capability – Bulk erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
- Erase performance: 400KB/sec (64KB sector)
- Erase performance: 80KB/sec (4KB sub-sector)
- Program performance: 2MB/sec
- Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
- Electronic signature – JEDEC-standard 3-byte signature (BB19h) – Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | WPDFN-8(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 120us | |
| Standby Supply Current | - | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | WPDFN-8(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 256Mbit | |
| Voltage - Supply | 1.7V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 120us | |
| Standby Supply Current | - | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency – 166 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols: Extended, Dual and Quad I/O both STR and DTR
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Additional reset pin for selected part numbers
- 3-byte and 4-byte address modes – enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory – Readable and user-lockable – Permanent lock with PROGRAM OTP command
- Erase capability – Bulk erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
- Erase performance: 400KB/sec (64KB sector)
- Erase performance: 80KB/sec (4KB sub-sector)
- Program performance: 2MB/sec
- Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
- Electronic signature – JEDEC-standard 3-byte signature (BB19h) – Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
C2063145 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



