BeRex Corp BCF080T
| Manufacturer | |
| MPN | BCF080T |
| LCSC Part # | C20056103 |
| Packaging | - |
| Customer # | |
| Key Attributes | 320mA 2V 1.9W RF FETs, MOSFETs RoHS |
| Datasheet | BeRex Corp BCF080T |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 320mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1.9W |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp | |
| Packaging | - |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 320mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1.9W |
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Introduction
AI Translation
BeRex BCF080T is a GaAs power MESFET with a nominal gate length of 0.3 µm and a gate width of 800 µm, making it well suited for applications requiring high OIP3 linearity and low phase noise, while delivering high gain and moderate power from DC to 26.5 GHz. The device is suitable for both broadband and narrowband applications.
Features
AI Translation
- Typical output power 26.0 dBm
- Typical power gain 11.0 dB at 12 GHz
- Low phase noise
- 0.3×800 µm recessed gate
Applications
AI Translation
- Commercial Applications - Test & Measurement
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 109.8894 | $ 109.89 |
| 200+ | $ 43.8465 | $ 8769.30 |
| 500+ | $ 42.3816 | $ 21190.80 |
| 1,000+ | $ 41.6579 | $ 41657.90 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 320mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1.9W |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp | |
| Packaging | - |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 320mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1.9W |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BeRex BCF080T is a GaAs power MESFET with a nominal gate length of 0.3 µm and a gate width of 800 µm, making it well suited for applications requiring high OIP3 linearity and low phase noise, while delivering high gain and moderate power from DC to 26.5 GHz. The device is suitable for both broadband and narrowband applications.
Features
AI Translation
- Typical output power 26.0 dBm
- Typical power gain 11.0 dB at 12 GHz
- Low phase noise
- 0.3×800 µm recessed gate
Applications
AI Translation
- Commercial Applications - Test & Measurement
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

