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Modelos EDAEasyEDA
VBsemi Elec AO4422A-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | AO4422A-VB |
| Nº LCSC | C19632265 |
| Emb. | SO-8 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 30V 13A SO-8 |
| Hoja de Datos | VBsemi Elec AO4422A-VB |
| Piezas alternativas | 20 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Aplicaciones
Traducción por IA
- Laptop CPU core
- High-end switching
En stock: 20
20 En stock, envío inmediato
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.3493$ 0.2970 | $ 1.49 |
| 50+ | $ 0.2772$ 0.2357 | $ 11.79 |
| 150+ | $ 0.2464$ 0.2095 | $ 31.43 |
| 500+ | $ 0.2078$ 0.1767 | $ 88.35 |
| 2,500+ | $ 0.1907$ 0.1621 | $ 405.25 |
| 4,000+ | $ 0.1804$ 0.1534 | $ 613.60 |
Encapsulado Estándar4000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Aplicaciones
Traducción por IA
- Laptop CPU core
- High-end switching
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| IRF7807ATRPBF-VB | VBsemi Elec | SO-8 | 2,520 | $0.2101 $0.2471 | ||
| VBA1210 | VBsemi Elec | SO-8 | 2,410 | $0.1748 $0.2056 | ||
| RSS125N03TB-VB | VBsemi Elec | SO-8 | 50 | $0.2970 $0.3493 | ||
| IRF7413ZTRPBF-VB | VBsemi Elec | SO-8 | 50 | $0.2935 $0.3452 | ||
| SI4410DY-T1-E3-VB | VBsemi Elec | SO-8 | 45 | $0.4159 $0.4377 | ||
| FDS6298-NL-VB | VBsemi Elec | SO-8 | 45 | $0.2935 $0.3452 | ||
| SI4800BDY-T1-E3-VB | VBsemi Elec | SO-8 | 40 | $ 0.4138 | ||
| UPA1701AG-VB | VBsemi Elec | SO-8 | 40 | $0.2935 $0.3452 | ||
| MDS1653URH-VB | VBsemi Elec | SO-8 | 40 | $0.2935 $0.3452 | ||
| SI4004DY-T1-E3-VB | VBsemi Elec | SO-8 | 20 | $0.2819 $0.3316 | ||
| AP6680BGM-VB | VBsemi Elec | SO-8 | 20 | $0.2935 $0.3452 | ||
| SI4668DY-T1-GE3-VB | VBsemi Elec | SO-8 | 20 | $0.2935 $0.3452 | ||
| ME4894-VB | VBsemi Elec | SO-8 | 20 | $0.2935 $0.3452 | ||
| AO4820-VB | VBsemi Elec | SO-8 | 20 | $0.2819 $0.3316 | ||
| DMG4406LSS-VB | VBsemi Elec | SO-8 | 15 | $0.2819 $0.3316 | ||
| FDS6670AS-VB | VBsemi Elec | SO-8 | 1 | $0.3937 $0.4144 | ||
| FDS4410-NL-VB | VBsemi Elec | SO-8 | 0 | $0.4163 $0.4382 | ||
| SI9426DY-T1-E3-VB | VBsemi Elec | SO-8 | 0 | $ 0.352 | ||
| TPC8009-H-VB | VBsemi Elec | SO-8 | 0 | $0.3151 $0.3316 | ||
| Si4776DY-T1-GE3-VB | VBsemi Elec | SO-8 | 0 | $0.4163 $0.4382 |