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VBsemi Elec FX6ASJ-03-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FX6ASJ-03-VB |
| LCSC Part # | C19632199 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 38A TO-252 |
| Datasheet | VBsemi Elec FX6ASJ-03-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 255pF | |
| Current - Continuous Drain(Id) | 38A | |
| Ciss-Input Capacitance | 1.35nF | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss) | 190pF | |
| RDS(on) | 46mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 255pF | |
| Current - Continuous Drain(Id) | 38A | |
| Ciss-Input Capacitance | 1.35nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss) | 190pF | |
| RDS(on) | 46mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Halogen-free
- Trench power MOSFET
- 100% Rg tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant
Applications
AI Translation
- Load Switch - Notebook Adapter Switch
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 255pF | |
| Current - Continuous Drain(Id) | 38A | |
| Ciss-Input Capacitance | 1.35nF | |
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss) | 190pF | |
| RDS(on) | 46mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 255pF | |
| Current - Continuous Drain(Id) | 38A | |
| Ciss-Input Capacitance | 1.35nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 20W | |
| Reverse Transfer Capacitance (Crss) | 190pF | |
| RDS(on) | 46mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Halogen-free
- Trench power MOSFET
- 100% Rg tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant
Applications
AI Translation
- Load Switch - Notebook Adapter Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |