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Littelfuse/IXYS IXFK140N30P

Manufacturer
Littelfuse/IXYS
MPN
IXFK140N30P
LCSC Part #
C19270216
Packaging
TO-264-3
Customer #
Key Attributes
Polar Power MOSFET, N-Channel Enhancement Mode
DatasheetLittelfuse/IXYS IXFK140N30P
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerLittelfuse/IXYS
PackagingTO-264-3
Output Capacitance(Coss)1.83nF
Ciss-Input Capacitance14.8nF
Pd - Power Dissipation1.04kW
Configuration-
Drain to Source Voltage300V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)140A
Reverse Transfer Capacitance (Crss)55pF
RDS(on)20mΩ@10V
Number1 N-channel
Gate Charge(Qg)185nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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Introduction

AI Translation

N-channel enhancement mode power MOSFETs fabricated using SGT technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.

Features

AI Translation
  • Fast intrinsic diode
  • Avalanche Rated
  • Low RDS(ON) and QG
  • Low package inductance

Applications

AI Translation
  • DC-DC converters
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • DC choppers
  • AC and DC motor control
  • Uninterrupted power supplies
  • High speed power switching applications