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EDA ModelsEasyEDA
ST STP100N6F7
| Manufacturer | |
| MPN | STP100N6F7 |
| LCSC Part # | C183260 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 100A TO-220 |
| Datasheet | ST STP100N6F7 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 970pF | |
| Ciss-Input Capacitance | 1.98nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 86pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 970pF | |
| Ciss-Input Capacitance | 1.98nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 86pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel power MOSFET utilizes STripFET™ F7 technology, featuring an optimized trench gate structure that achieves ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operation.
Features
AI Translation
- Among the lowest R<sub>DS(ON)</sub> in the market
- Excellent figure of merit (FoM)
- Low C<sub>rss</sub>/C<sub>iss</sub> ratio for EMI immunity
- High avalanche ruggedness
Applications
AI Translation
- Switching applications
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 53
53 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7367 | $ 1.74 |
| 10+ | $ 1.4508 | $ 14.51 |
| 50+ | $ 1.2949 | $ 64.75 |
| 100+ | $ 1.1178 | $ 111.78 |
| 500+ | $ 1.0398 | $ 519.90 |
| 1,000+ | $ 1.0041 | $ 1004.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 970pF | |
| Ciss-Input Capacitance | 1.98nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 86pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 970pF | |
| Ciss-Input Capacitance | 1.98nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 100A | |
| Reverse Transfer Capacitance (Crss) | 86pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel power MOSFET utilizes STripFET™ F7 technology, featuring an optimized trench gate structure that achieves ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operation.
Features
AI Translation
- Among the lowest R<sub>DS(ON)</sub> in the market
- Excellent figure of merit (FoM)
- Low C<sub>rss</sub>/C<sub>iss</sub> ratio for EMI immunity
- High avalanche ruggedness
Applications
AI Translation
- Switching applications
C183260 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| AGM12T05C | AGMSEMI | Similar | TO-220C | 8 | $ 1.0997 | ||
| HE10N082SG | R+O | Similar | TO-220CB | 2,921 | $ 0.4725 | ||
| JMSL0606AC | Jiangsu JieJie Microelectronics | Similar | TO-220 | 4 | $ 0.5899 | ||
| BUK7509-55A,127-VB | VBsemi Elec | Similar | TO-220AB | 5 | $1.1192 $1.1781 | ||
| BUK7506-55A127-VB | VBsemi Elec | Similar | TO-220AB | 5 | $1.1192 $1.1781 |