Imágenes ilustrativas
Modelos EDAEasyEDA
MICROCHIP APTGLQ40H120T1G
| Fabricante | |
| N.º de pieza fab. | APTGLQ40H120T1G |
| Nº LCSC | C17596236 |
| Emb. | - |
| Número de Cliente | |
| Atrib. clave | 250W 75A 1.2kV FS (Field Stop) IGBT Modules RoHS |
| Hoja de Datos | MICROCHIP APTGLQ40H120T1G |
| Cumplimiento RoHS | 2 documentos disponibles |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Fabricante | MICROCHIP | |
| Emb. | - | |
| Td(off) | 290ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 30ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 135pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 185nC | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Reverse Recovery Time(trr) | 300ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 2.3nF@25V | |
| Output Capacitance(Coes) | 150pF |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Fabricante | MICROCHIP | |
| Emb. | - | |
| Td(off) | 290ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 30ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 135pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descripción | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 185nC | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Reverse Recovery Time(trr) | 300ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 2.3nF@25V | |
| Output Capacitance(Coes) | 150pF |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
VCES = 1200V, IC = 40A (Tc = 80°C), pins 3/4 must be shorted together.
Características
Traducción por IA
- High-speed Trench + Field Stop IGBT 4 technology
- Low voltage drop
- Low leakage current
- Low switching losses, RBSOA and SCSOA rated
- Ultra-low stray inductance
- High integration
- Built-in thermistor for temperature monitoring
Aplicaciones
Traducción por IA
Welding converters, switch-mode power supplies, uninterruptible power supplies, motor control
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 209.1112 | $ 209.11 |
| 200+ | $ 83.4368 | $ 16687.36 |
| 500+ | $ 80.6495 | $ 40324.75 |
| 1,000+ | $ 79.2713 | $ 79271.30 |
Encapsulado Estándar1/Full Bag | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Fabricante | MICROCHIP | |
| Emb. | - | |
| Td(off) | 290ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 30ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 135pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 185nC | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Reverse Recovery Time(trr) | 300ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 2.3nF@25V | |
| Output Capacitance(Coes) | 150pF |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Fabricante | MICROCHIP | |
| Emb. | - | |
| Td(off) | 290ns | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 30ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 135pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descripción | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Gate Charge(Qg) | 185nC | |
| Vce Saturation(VCE(sat)) | 2.05V | |
| Reverse Recovery Time(trr) | 300ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 2.3nF@25V | |
| Output Capacitance(Coes) | 150pF |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
VCES = 1200V, IC = 40A (Tc = 80°C), pins 3/4 must be shorted together.
Características
Traducción por IA
- High-speed Trench + Field Stop IGBT 4 technology
- Low voltage drop
- Low leakage current
- Low switching losses, RBSOA and SCSOA rated
- Ultra-low stray inductance
- High integration
- Built-in thermistor for temperature monitoring
Aplicaciones
Traducción por IA
Welding converters, switch-mode power supplies, uninterruptible power supplies, motor control
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |