Advanced Linear Devices ALD110814PCL
| Manufacturer | |
| MPN | ALD110814PCL |
| LCSC Part # | C17397014 |
| Packaging | PDIP-16 |
| Customer # | |
| Key Attributes | 10V 12mA 500Ω 500mW 1.42V 4 N-Channel PDIP-16 FET, MOSFET Arrays RoHS |
| Datasheet | Advanced Linear Devices ALD110814PCL |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Advanced Linear Devices | |
| Packaging | PDIP-16 | |
| Drain to Source Voltage | 10V | |
| Current - Continuous Drain(Id) | 12mA | |
| RDS(on) | 500Ω | |
| Pd - Power Dissipation | 500mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.42V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 2.5pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | 0℃~+70℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Advanced Linear Devices | |
| Packaging | PDIP-16 | |
| Drain to Source Voltage | 10V | |
| Current - Continuous Drain(Id) | 12mA | |
| RDS(on) | 500Ω | |
| Pd - Power Dissipation | 500mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.42V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 2.5pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | 0℃~+70℃ | |
| Output Capacitance(Coss) | - |
Introduction
ALD110814/ALD110914 are high-precision monolithic quad/dual enhancement-mode N-channel MOSFETs, factory-matched using ALD's proven EPAD® CMOS technology. These devices are suited for low-voltage, small-signal applications. The ALD110814/ALD110914 MOSFETs are designed and manufactured to achieve excellent device electrical characteristics matching. Since these devices are integrated on the same monolithic die, they also exhibit outstanding temperature coefficient tracking. Each device is versatile as a circuit element and serves as a practical design building block for numerous analog applications. They are fundamental building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. The ALD110814/ALD110914 devices are designed to achieve minimum offset voltage and differential thermal response, suitable for switching and amplification applications in +1.5V to +10V systems that require low input bias current, low input capacitance, and fast switching speed. The ALD110814/ALD110914 are suited for precision applications requiring very high current gain (β), such as current mirrors and current sources. The high input impedance and high DC current gain of FETs result in extremely low current loss through the control gate. DC current gain is limited by gate input leakage current, which is specified at 30pA at room temperature.
Features
- Enhancement-mode (normally-on)
- Standard gate threshold voltage: +1.40V
- Matched characteristics between MOSFETs
- Tight lot-to-lot parameter control
- MOSFETs paralleled for increased drain current
- Low input capacitance
- VGS(th) matched to 10mV
- High input impedance — typical 10^12 Ω
- Positive, zero, and negative VGS(th) temperature coefficients
- DC current gain >10^8
- Low input and output leakage current
Applications
- Precision current mirror
- Precision current source
- Voltage chopper
- Differential amplifier input stage
- Discrete voltage comparator
- Voltage bias circuit
- Sample-and-hold circuit
- Analog inverter
- Level shifter
- Source follower and buffer
- Current multiplier
- Discrete analog multiplexer/matrix
- Discrete analog switch
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 12.3172 | $ 12.32 |
| 200+ | $ 4.9158 | $ 983.16 |
| 500+ | $ 4.7507 | $ 2375.35 |
| 1,000+ | $ 4.6698 | $ 4669.80 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Advanced Linear Devices | |
| Packaging | PDIP-16 | |
| Drain to Source Voltage | 10V | |
| Current - Continuous Drain(Id) | 12mA | |
| RDS(on) | 500Ω | |
| Pd - Power Dissipation | 500mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.42V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 2.5pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | 0℃~+70℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Advanced Linear Devices | |
| Packaging | PDIP-16 | |
| Drain to Source Voltage | 10V | |
| Current - Continuous Drain(Id) | 12mA | |
| RDS(on) | 500Ω | |
| Pd - Power Dissipation | 500mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.42V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF | |
| Number | 4 N-Channel | |
| Input Capacitance(Ciss) | 2.5pF | |
| Gate Charge(Qg) | - | |
| Operating Temperature | 0℃~+70℃ | |
| Output Capacitance(Coss) | - |
Introduction
ALD110814/ALD110914 are high-precision monolithic quad/dual enhancement-mode N-channel MOSFETs, factory-matched using ALD's proven EPAD® CMOS technology. These devices are suited for low-voltage, small-signal applications. The ALD110814/ALD110914 MOSFETs are designed and manufactured to achieve excellent device electrical characteristics matching. Since these devices are integrated on the same monolithic die, they also exhibit outstanding temperature coefficient tracking. Each device is versatile as a circuit element and serves as a practical design building block for numerous analog applications. They are fundamental building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. The ALD110814/ALD110914 devices are designed to achieve minimum offset voltage and differential thermal response, suitable for switching and amplification applications in +1.5V to +10V systems that require low input bias current, low input capacitance, and fast switching speed. The ALD110814/ALD110914 are suited for precision applications requiring very high current gain (β), such as current mirrors and current sources. The high input impedance and high DC current gain of FETs result in extremely low current loss through the control gate. DC current gain is limited by gate input leakage current, which is specified at 30pA at room temperature.
Features
- Enhancement-mode (normally-on)
- Standard gate threshold voltage: +1.40V
- Matched characteristics between MOSFETs
- Tight lot-to-lot parameter control
- MOSFETs paralleled for increased drain current
- Low input capacitance
- VGS(th) matched to 10mV
- High input impedance — typical 10^12 Ω
- Positive, zero, and negative VGS(th) temperature coefficients
- DC current gain >10^8
- Low input and output leakage current
Applications
- Precision current mirror
- Precision current source
- Voltage chopper
- Differential amplifier input stage
- Discrete voltage comparator
- Voltage bias circuit
- Sample-and-hold circuit
- Analog inverter
- Level shifter
- Source follower and buffer
- Current multiplier
- Discrete analog multiplexer/matrix
- Discrete analog switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| ALD110808PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 11.4211 | ||
| ALD114804APCL | Advanced Linear Devices | PDIP-16 | 0 | $ 16.3079 | ||
| ALD114835PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 14.5298 | ||
| ALD114804PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 13.0822 | ||
| SD5000N PDIP 16L ROHS | Linear Integrated Systems | DIP-16 | 0 | $ 9.0984 | ||
| ALD110800PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 9.1538 | ||
| ALD114813PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 13.314 | ||
| ALD210808PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 11.3093 | ||
| ALD210800PCL | Advanced Linear Devices | PDIP-16 | 0 | $ 13.0156 | ||
| ALD210808APCL | Advanced Linear Devices | PDIP-16 | 0 | $ 15.2123 |

