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Advanced Linear Devices ALD110814PCL product image
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Advanced Linear Devices ALD110814PCL

Manufacturer
MPN
ALD110814PCL
LCSC Part #
C17397014
Packaging
PDIP-16
Customer #
Key Attributes
10V 12mA 500Ω 500mW 1.42V 4 N-Channel PDIP-16 FET, MOSFET Arrays RoHS
DatasheetAdvanced Linear Devices ALD110814PCL
Alternative Parts10
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1+$ 12.3172$ 12.32
200+$ 4.9158$ 983.16
500+$ 4.7507$ 2375.35
1,000+$ 4.6698$ 4669.80
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerAdvanced Linear Devices
PackagingPDIP-16
Drain to Source Voltage10V
Current - Continuous Drain(Id)12mA
RDS(on)500Ω
Pd - Power Dissipation500mW
Gate Threshold Voltage (Vgs(th))1.42V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)0.1pF
Number4 N-Channel
Input Capacitance(Ciss)2.5pF
Gate Charge(Qg)-
Operating Temperature0℃~+70℃
Output Capacitance(Coss)-

Introduction

AI Translation

ALD110814/ALD110914 are high-precision monolithic quad/dual enhancement-mode N-channel MOSFETs, factory-matched using ALD's proven EPAD® CMOS technology. These devices are suited for low-voltage, small-signal applications. The ALD110814/ALD110914 MOSFETs are designed and manufactured to achieve excellent device electrical characteristics matching. Since these devices are integrated on the same monolithic die, they also exhibit outstanding temperature coefficient tracking. Each device is versatile as a circuit element and serves as a practical design building block for numerous analog applications. They are fundamental building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. The ALD110814/ALD110914 devices are designed to achieve minimum offset voltage and differential thermal response, suitable for switching and amplification applications in +1.5V to +10V systems that require low input bias current, low input capacitance, and fast switching speed. The ALD110814/ALD110914 are suited for precision applications requiring very high current gain (β), such as current mirrors and current sources. The high input impedance and high DC current gain of FETs result in extremely low current loss through the control gate. DC current gain is limited by gate input leakage current, which is specified at 30pA at room temperature.

Features

AI Translation
  • Enhancement-mode (normally-on)
  • Standard gate threshold voltage: +1.40V
  • Matched characteristics between MOSFETs
  • Tight lot-to-lot parameter control
  • MOSFETs paralleled for increased drain current
  • Low input capacitance
  • VGS(th) matched to 10mV
  • High input impedance — typical 10^12 Ω
  • Positive, zero, and negative VGS(th) temperature coefficients
  • DC current gain >10^8
  • Low input and output leakage current

Applications

AI Translation
  • Precision current mirror
  • Precision current source
  • Voltage chopper
  • Differential amplifier input stage
  • Discrete voltage comparator
  • Voltage bias circuit
  • Sample-and-hold circuit
  • Analog inverter
  • Level shifter
  • Source follower and buffer
  • Current multiplier
  • Discrete analog multiplexer/matrix
  • Discrete analog switch

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
ALD110808PCLAdvanced Linear DevicesPDIP-160$ 11.4211
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ALD114835PCLAdvanced Linear DevicesPDIP-160$ 14.5298
ALD114804PCLAdvanced Linear DevicesPDIP-160$ 13.0822
SD5000N PDIP 16L ROHSLinear Integrated SystemsDIP-160$ 9.0984
ALD110800PCLAdvanced Linear DevicesPDIP-160$ 9.1538
ALD114813PCLAdvanced Linear DevicesPDIP-160$ 13.314
ALD210808PCLAdvanced Linear DevicesPDIP-160$ 11.3093
ALD210800PCLAdvanced Linear DevicesPDIP-160$ 13.0156
ALD210808APCLAdvanced Linear DevicesPDIP-160$ 15.2123