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MICROCHIP APT25GP120BG product image
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MICROCHIP APT25GP120BG

Manufacturer
MICROCHIP
MPN
APT25GP120BG
LCSC Part #
C17315637
Packaging
TO-247
Customer #
Key Attributes
417W 69A 1.2kV PT (Punch-Through) TO-247 Single IGBTs RoHS
DatasheetMICROCHIP APT25GP120BG
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerMICROCHIP
PackagingTO-247
Pd - Power Dissipation417W
Td(off)70ns
Td(on)12ns
Current - Collector(Ic)69A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)40pF
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.9V@15V,25A
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))3.3V;3V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)438uJ;1.187mJ
Turn-On Energy (Eon)500uJ;1.092mJ;1.577mJ
Input Capacitance(Cies)2.09nF
Output Capacitance(Coes)200pF
Gate Charge(Qg)110nC
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Introduction

AI Translation

Next-generation high-voltage power IGBT. Utilizing punch-through technology and a proprietary metal gate, this IGBT is optimized for very fast switching, making it ideal for high-frequency, high-voltage switching power supplies and applications sensitive to tail current. In many cases, the POWER MOS 7 IGBT offers a cost-effective alternative to power MOSFETs.

Features

AI Translation
  • Low conduction loss
  • 100kHz operation at 800V, 11A
  • Low gate charge
  • 50kHz operation at 800V, 19A
  • Ultra-fast tail current turn-off
  • RBSOA rated