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UTC 17P10L-TN3-R
| Fabricante | UTCAsian Brands |
| N.º de pieza fab. | 17P10L-TN3-R |
| Nº LCSC | C171561 |
| Emb. | TO-252-2(DPAK) |
| Número de Cliente | |
| Atrib. clave | 70W 100V 17A 4V 180mΩ@10V 1 P-Channel P-Channel TO-252-2(DPAK) Single FETs, MOSFETs |
| Hoja de Datos | UTC 17P10L-TN3-R |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 190pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 190pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The 17P10 utilizes advanced proprietary planar stripe DMOS technology to achieve excellent RDS(ON), low gate charge, and operation at low gate voltages. This device is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
Características
Traducción por IA
- R<sub>DS(ON)</sub> < 0.18Ω at V<sub>GS</sub> = -10V, I<sub>D</sub> = -8.25A
- Low capacitance
- Low gate charge
- Fast switching capability
- Avalanche energy specified
Aplicaciones
Traducción por IA
- Audio amplifier
- High-efficiency switching DC/DC converter
- DC motor control
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.567 | $ 0.57 |
| 10+ | $ 0.4809 | $ 4.81 |
| 30+ | $ 0.4436 | $ 13.31 |
| 100+ | $ 0.3981 | $ 39.81 |
| 500+ | $ 0.377 | $ 188.50 |
| 1,000+ | $ 0.3656 | $ 365.60 |
Encapsulado Estándar2500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 190pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Type | P-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | UTC | |
| Emb. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 190pF | |
| Pd - Power Dissipation | 70W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 180mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.51nF | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Type | P-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The 17P10 utilizes advanced proprietary planar stripe DMOS technology to achieve excellent RDS(ON), low gate charge, and operation at low gate voltages. This device is suitable for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
Características
Traducción por IA
- R<sub>DS(ON)</sub> < 0.18Ω at V<sub>GS</sub> = -10V, I<sub>D</sub> = -8.25A
- Low capacitance
- Low gate charge
- Fast switching capability
- Avalanche energy specified
Aplicaciones
Traducción por IA
- Audio amplifier
- High-efficiency switching DC/DC converter
- DC motor control
C171561 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| UTT18P10L-TN3-R | UTC | TO-252 | 2,380 | $ 0.3086 | ||
| UTT25P10L-TN3-R | UTC | TO-252 | 30 | $ 0.3751 | ||
| UTT18P10G-TN3-R | UTC | TO-252 | 0 | $ 0.4918 |