- Diagrama de pines
- Footprint
Imágenes ilustrativas
Modelos EDAEasyEDA
Wuxi China Resources Huajing Microelectronics CS4N65A3R
| Fabricante | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| N.º de pieza fab. | CS4N65A3R |
| Nº LCSC | C140733 |
| Emb. | TO-251(IPAK) |
| Número de Cliente | |
| Atrib. clave | 650V 4A 4V 75W 2.8Ω@10V 1 N-channel N-Channel TO-251(IPAK) Single FETs, MOSFETs |
| Hoja de Datos | Wuxi China Resources Huajing Microelectronics CS4N65A3R |
| Piezas alternativas | 8 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-251(IPAK) | |
| Operating Temperature | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 610pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-251(IPAK) | |
| Operating Temperature | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 610pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
CS4N65 A3R is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces conduction losses, improves switching performance, and enhances avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-251 package, RoHS compliant.
Características
Traducción por IA
- Fast switching
- Low on-resistance (Rdson ≤ 2.8Ω)
- Low gate charge (typical: 14.5 nC)
- Low reverse transfer capacitance (typical: 3.5 pF)
- 100% single-pulse avalanche energy tested
Aplicaciones
Traducción por IA
- Power switching circuits for adapters and chargers.
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.2776 | $ 0.28 |
| 10+ | $ 0.2334 | $ 2.33 |
| 30+ | $ 0.2145 | $ 6.44 |
| 100+ | $ 0.1908 | $ 19.08 |
| 500+ | $ 0.1803 | $ 90.15 |
| 1,000+ | $ 0.174 | $ 174.00 |
Encapsulado Estándar100/Full Tube | ||
¿Mejor precio por mayor cantidad?
$
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-251(IPAK) | |
| Operating Temperature | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 610pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Wuxi China Resources Huajing Microelectronics | |
| Emb. | TO-251(IPAK) | |
| Operating Temperature | - | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 610pF | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
CS4N65 A3R is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology, which reduces conduction losses, improves switching performance, and enhances avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-251 package, RoHS compliant.
Características
Traducción por IA
- Fast switching
- Low on-resistance (Rdson ≤ 2.8Ω)
- Low gate charge (typical: 14.5 nC)
- Low reverse transfer capacitance (typical: 3.5 pF)
- 100% single-pulse avalanche energy tested
Aplicaciones
Traducción por IA
- Power switching circuits for adapters and chargers.
C140733 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| CS4N60A3R | Wuxi China Resources Huajing Microelectronics | TO-251 | 2 | $ 0.2488 | ||
| CS4N80A3HD-G | Wuxi China Resources Huajing Microelectronics | TO-251 | 1 | $ 0.563 | ||
| CS4N65A3HD | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.4306 | ||
| CS4N65A3HD1-G | Wuxi China Resources Huajing Microelectronics | TO-251 | 0 | $ 0.3538 | ||
| CS4N60A3HD | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.3203 | ||
| CS7N65A3R | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.5378 | ||
| CS7N65A3R-G | Wuxi China Resources Huajing Microelectronics | TO-251 | 0 | $ 0.3391 | ||
| CS6N60A3D | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.4454 |