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onsemi NCV1413BDR2G

Manufacturer
MPN
NCV1413BDR2G
LCSC Part #
C138393
Packaging
SOIC-16
Customer #
Key Attributes
High Voltage, High Current Darlington Transistor Arrays
Datasheetonsemi NCV1413BDR2G
RoHS Compliance4 documents available
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOIC-16
Output Leakage Current(Icex)50uA
Collector - Emitter Voltage VCEO-
Input Capacitiance(Ci)15pF
Reverse Leakage Current (Ir)50uA
number of channelsSeven channels
Input Current(on)1.35mA
Vce Saturation(VCE(sat))1.1V
typeBJT
Voltage - Input(Max)30V
Voltage - Forward(Vf)1.5V
Input Current(off)100uA
Current - Collector(Ic)500mA
Operating Temperature-40℃~+125℃

Introduction

AI Translation

The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kΩ series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic.

Features

AI Translation
  • Pb-Free Packages are Available
  • NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes