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EDA ModelsEasyEDA
onsemi FDD8880
| Manufacturer | |
| MPN | FDD8880 |
| LCSC Part # | C130709 |
| Packaging | TO-252AA |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 89A TO-252AA |
| Datasheet | onsemi FDD8880 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252AA | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 89A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.26nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252AA | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 89A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.26nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
AI Translation
- rDS(ON)=9mΩ, VGS=10V, ID=35A
- rDS(ON)=12mΩ, VGS=4.5V, ID=35A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
- RoHS Compliant
Applications
AI Translation
- DC/DC converters
In-Stock: 82
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.919 | $ 0.92 |
| 10+ | $ 0.777 | $ 7.77 |
| 30+ | $ 0.7068 | $ 21.20 |
| 100+ | $ 0.6366 | $ 63.66 |
| 500+ | $ 0.5877 | $ 293.85 |
| 1,000+ | $ 0.5665 | $ 566.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252AA | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 89A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.26nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252AA | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 89A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.26nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
AI Translation
- rDS(ON)=9mΩ, VGS=10V, ID=35A
- rDS(ON)=12mΩ, VGS=4.5V, ID=35A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
- RoHS Compliant
Applications
AI Translation
- DC/DC converters
C130709 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSU3004 | HUASHUO | TO-252-2 | 2,565 | $ 0.1425 | ||
| IRLR7843TRPBF-ES | ElecSuper | TO-252 | 2,040 | $ 0.2693 | ||
| WSF4095 | Winsok Semicon | TO-252 | 81 | $0.3919 $0.4354 | ||
| STD80N6F6-VB | VBsemi Elec | TO-252 | 22 | $1.3511 $1.4222 | ||
| 100N03 | GOODWORK | TO-252 | 5 | $ 0.1576 | ||
| HSU150N03 | HUASHUO | TO-252-2 | 5 | $ 0.3793 | ||
| MU3014D | MIRACLE POWER | TO-252 | 210 | $0.1983 $0.2087 | ||
| MU3020D | MIRACLE POWER | TO-252 | 105 | $0.2586 $0.2722 | ||
| QM3016AD-VB | VBsemi Elec | TO-252 | 47 | $0.5107 $0.6008 | ||
| TM0035N03D | Tritech-MOS | TO-252-3L | 0 | $0.0915 $0.0963 |