ST STB14NK50ZT4
| Manufacturer | |
| MPN | STB14NK50ZT4 |
| LCSC Part # | C116183 |
| Packaging | TO-263-2 |
| Customer # | |
| Key Attributes | 500V 14A 4.5V 150W 380mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS |
| Datasheet | ST STB14NK50ZT4 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-263-2 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 238pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 92nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-263-2 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 238pF | |
| Current - Continuous Drain(Id) | 14A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 92nC@10V | |
| Type | N-Channel |
Introduction
The SuperMESH™ series is derived from extreme optimization of ST's well-established stripe-based PowerMESH™ layout. In addition to significantly reducing on-resistance, special emphasis has been placed on ensuring excellent dv/dt capability in the most demanding applications. This series completes ST's full lineup of high-voltage MOSFETs, which includes the revolutionary MDmesh™ products.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Excellent manufacturing repeatability
Applications
- Switching applications
- TO-220
- TO-247
- TO-220FP
- I2PAK
- D2PAK
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.5588 | $ 2.56 |
| 10+ | $ 2.2437 | $ 22.44 |
| 30+ | $ 2.0455 | $ 61.37 |
| 100+ | $ 1.8424 | $ 184.24 |
| 500+ | $ 1.7514 | $ 875.70 |
| 1,000+ | $ 1.7108 | $ 1710.80 |
Standard Packaging1000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-263-2 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 238pF | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 92nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-263-2 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | 238pF | |
| Current - Continuous Drain(Id) | 14A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 92nC@10V | |
| Type | N-Channel |
Introduction
The SuperMESH™ series is derived from extreme optimization of ST's well-established stripe-based PowerMESH™ layout. In addition to significantly reducing on-resistance, special emphasis has been placed on ensuring excellent dv/dt capability in the most demanding applications. This series completes ST's full lineup of high-voltage MOSFETs, which includes the revolutionary MDmesh™ products.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Excellent manufacturing repeatability
Applications
- Switching applications
- TO-220
- TO-247
- TO-220FP
- I2PAK
- D2PAK
C116183 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPB65R190CFDATMA2 | Infineon | TO-263 | 44 | $ 3.7309 | ||
| STB14NK60ZT4 | ST | D2PAK | 10 | $ 9.197 | ||
| IPB65R190CFDA | Infineon | TO-263 | 49 | $ 5.1469 | ||
| STB28NM50N | ST | D2PAK | 13 | $5.8517 $8.0159 | ||
| STB32N65M5 | ST | D2PAK | 10 | $ 24.8162 | ||
| AOB125A60L-VB | VBsemi Elec | TO-263(D2PAK) | 5 | $2.8543 $3.358 | ||
| VBL16R25SFD | VBsemi Elec | TO-263(D2PAK) | 2 | $2.8543 $3.358 | ||
| IPB60R120P7-VB | VBsemi Elec | TO-263(D2PAK) | 1 | $ 3.7556 | ||
| 14N50L-TQ2-R | UTC | TO-263-2 | 0 | $ 0.6889 | ||
| AOB14N50 | AOS | TO-263(D2PAK) | 0 | $ 2.4709 |



