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Infineon IRFL4310TRPBF
| Manufacturer | |
| MPN | IRFL4310TRPBF |
| LCSC Part # | C115168 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 2.2A SOT-223 |
| Datasheet | Infineon IRFL4310TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Features
- Surface Mount
- Dynamic dv/dt Rating
- Fast Switching
- Ease of Paralleling
- Advanced Process Technology
- Ultra Low On-Resistance
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6538 | $ 0.65 |
| 10+ | $ 0.5426 | $ 5.43 |
| 30+ | $ 0.4952 | $ 14.86 |
| 100+ | $ 0.4364 | $ 43.64 |
| 500+ | $ 0.34 | $ 170.00 |
| 1,000+ | $ 0.3236 | $ 323.60 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 92pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 25nC@10V | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Features
- Surface Mount
- Dynamic dv/dt Rating
- Fast Switching
- Ease of Paralleling
- Advanced Process Technology
- Ultra Low On-Resistance
- Lead-Free
C115168 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSL0004 | HUASHUO | SOT-223 | 1,850 | $ 0.1496 | ||
| FQT7N10LTF-ES | ElecSuper | SOT-223 | 270 | $ 0.2419 | ||
| DMN10H220LE-13-ES | ElecSuper | SOT-223 | 180 | $ 0.1799 | ||
| NCE0106R-ES | ElecSuper | SOT-223 | 100 | $ 0.1125 | ||
| IRFM120ATF | onsemi | SOT-223 | 4 | $ 0.7587 | ||
| ZXMN10A11GTA | DIODES | SOT-223 | 1 | $ 0.4059 | ||
| FDT86244 | onsemi | SOT-223 | 1,002 | $ 0.7932 | ||
| IPN60R600PFD7S | Infineon | SOT-223 | 36 | $ 0.7523 | ||
| FDT86102LZ | onsemi | SOT-223 | 28 | $ 1.3826 | ||
| STN2NF10 | ST | SOT-223 | 6,431 | $ 0.5163 |