LCSC Electronics logoLCSC Electronics svg logo
Iniciar sesión
USD
TI UCC21222DR product image
  • UCC21222DR thumbnail 1
  • UCC21222DR thumbnail 2
  • UCC21222DR thumbnail 3
  • Diagrama de pines
  • Footprint
Imágenes ilustrativas

TI UCC21222DR

Fabricante
N.º de pieza fab.
UCC21222DR
Nº LCSC
C2878024
Emb.
SOIC-16
Número de Cliente
Atrib. clave
Isolated dual-channel gate driver (with dead time)
Hoja de DatosTI UCC21222DR
Cumplimiento RoHS2 documentos disponibles
En stock: 2,032
2,032 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
Cant.Prec. unit.Importo total
1+$ 2.2714$ 2.27
10+$ 1.9355$ 19.36
30+$ 1.7257$ 51.77
100+$ 1.511$ 151.10
500+$ 1.4127$ 706.35
1,000+$ 1.3717$ 1371.70
Encapsulado Estándar2500/Full Reel
¿Mejor precio por mayor cantidad?
$

Especificaciones del Producto

Todo
TipoDescripción
CategoríaIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
FabricanteTI
Emb.SOIC-16
Input Logic Level - Low0.8V~1.25V
Low Level Delay Time40ns
High Level Delay Time40ns
number of channels2
Quiescent Current2mA
Input Logic Level - High1.6V~2V
Driven ConfigurationLow Side;High Side;Half-Bridge
Operating Temperature-40℃~+130℃@(Tj)
Current - Output Low(IOL)6A
Fall Time12ns
FeaturesDead-time control
Current - Output High(IOH)4A
Load TypeIGBT;MOSFET
Voltage - Supply (Driver)9.2V~18V
Voltage - Supply (Input)3V~5.5V

Descripción

Traducción por IA

The UCC21222 device is an isolated dual-channel gate driver with programmable dead time. This device uses a 4A peak source current and a 6A peak sink current to drive power MOSFETs, IGBTs, and GaN transistors. The UCC21222 device can be configured as two low-side drivers, two high-side drivers, or one half-bridge driver. The 5ns delay matching performance of this device allows two outputs to be paralleled, doubling the drive strength under heavy load conditions without the risk of internal breakdown. The input side is isolated from the two output drivers by a 3.0kV RMS isolation barrier, and the minimum common-mode transient immunity (CMTI) is 100V/ns. The dead time, which can be programmed via a resistor, allows you to adjust the system-limited dead time, thereby improving efficiency and preventing output overlap. Other protection features include: simultaneously turning off both outputs through the disable function when DIS is set high; an integrated anti-spike filter to suppress input transients shorter than 5ns; and 200ns negative voltage handling of spikes up to -2V on the input and output pins. All power supplies have UVLO protection.

Características

Traducción por IA
  • Resistor-programmable dead time
  • Versatile: dual low-side, dual high-side, or half-bridge driver
  • 4A peak source, 6A peak sink output current
  • 3V to 5.5V VCCI input range, up to 18V VDD output drive supply, 8V VDD UVLO
  • Switching parameters: 28ns typical propagation delay, 10ns minimum pulse width, 5ns maximum delay matching, 5.5ns maximum pulse width distortion, TTL and CMOS compatible inputs
  • Integrated spike filter
  • I/O withstands -2V for 200ns
  • CMTI greater than 100V/ns
  • Isolation barrier lifetime greater than 40 years
  • Surge immunity up to 7800V PK
  • Narrow-body SOIC-16 (D) package
  • Safety-related certifications (planned): 4242V PK isolation per DIN V VDE V 0884-11:2017-01 and DIN EN 61010-1, 3000V RMS isolation for 1 minute per UL 1577, CSA certified, compliant with IEC 60950-1, IEC 62368-1, and IEC 61010-1 end-equipment standards, CQC certified per GB4943.1-2011
  • Design custom solutions using UCC21222 with WEBENCH Power Designer

Aplicaciones

Traducción por IA
  • Isolated converters in AC/DC and DC/DC power supplies
  • Server, telecom, IT, and industrial infrastructure
  • Motor drives and photovoltaic inverters
  • HEV and EV battery chargers
  • Industrial transportation
  • UPS