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onsemi RFP50N06
| Manufacturer | |
| MPN | RFP50N06 |
| LCSC Part # | C274239 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 50A TO-220AB |
| Datasheet | onsemi RFP50N06 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 600pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 600pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel power MOSFETs are manufactured using the MegaFET process. This process features geometries approaching LSI scales, enabling optimal silicon utilization and delivering outstanding performance. They are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be driven directly by ICs.
Features
AI Translation
- 50A, 60V
- rDS(ON) = 0.022 Ω
- Temperature-compensated PSPICE® model
- 175°C operating temperature
Applications
AI Translation
- Switching Regulator - Switching Converter - Motor Driver - Relay Driver
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In-Stock: 92
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.7988 | $ 3.80 |
| 10+ | $ 3.349 | $ 33.49 |
| 50+ | $ 3.0666 | $ 153.33 |
| 100+ | $ 2.7777 | $ 277.77 |
| 500+ | $ 2.6464 | $ 1323.20 |
| 800+ | $ 2.5906 | $ 2072.48 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 600pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 600pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel power MOSFETs are manufactured using the MegaFET process. This process features geometries approaching LSI scales, enabling optimal silicon utilization and delivering outstanding performance. They are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be driven directly by ICs.
Features
AI Translation
- 50A, 60V
- rDS(ON) = 0.022 Ω
- Temperature-compensated PSPICE® model
- 175°C operating temperature
Applications
AI Translation
- Switching Regulator - Switching Converter - Motor Driver - Relay Driver
C274239 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| NCE8290AC | NCE | Similar | TO-220-3L | 548 | $ 0.5394 | ||
| SPZ44TQ | Siliup | Similar | TO-220-3L | 290 | $0.2740 $0.3044 | ||
| BR50N06 | BLUE ROCKET | Similar | TO-220 | 45 | $ 0.5372 | ||
| SE8090A | SINO-IC | Similar | TO-220 | 34 | $ 0.5954 | ||
| HYG200N12NS1P | HUAYI | Similar | TO-220FB-3 | 1 | $ 0.607 |
5 more alternative parts.View all substitutes