Images for reference only
EDA ModelsEasyEDA
onsemi FDMC86324
| Manufacturer | |
| MPN | FDMC86324 |
| LCSC Part # | C890972 |
| Packaging | PQFN-8 |
| Customer # | |
| Key Attributes | 41W 80V 20A 3.1V 19.1mΩ@10V 1 N-channel N-Channel PQFN-8 Single FETs, MOSFETs RoHS |
| Datasheet | onsemi FDMC86324 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 6 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8 | |
| Output Capacitance(Coss) | 175pF | |
| Pd - Power Dissipation | 41W | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 19.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8 | |
| Output Capacitance(Coss) | 175pF | |
| Pd - Power Dissipation | 41W | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 19.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is fabricated using an advanced power trench process, specially optimized to minimize on-resistance while maintaining excellent switching performance.
Features
AI Translation
- Maximum r<sub>DS(on)</sub> = 23 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 7 A
- Maximum r<sub>DS(on)</sub> = 37 mΩ at V<sub>GS</sub> = 6 V, I<sub>D</sub> = 4 A
- Low profile — Power 33 package maximum height 1 mm
- 100% UI1L tested
- RoHS compliant
Applications
AI Translation
- DC-DC conversion
In-Stock: 24
24 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6377 | $ 1.64 |
| 10+ | $ 1.6117 | $ 16.12 |
| 30+ | $ 1.5954 | $ 47.86 |
| 100+ | $ 1.5792 | $ 157.92 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8 | |
| Output Capacitance(Coss) | 175pF | |
| Pd - Power Dissipation | 41W | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 19.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8 | |
| Output Capacitance(Coss) | 175pF | |
| Pd - Power Dissipation | 41W | |
| Configuration | - | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 19.1mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 725pF | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is fabricated using an advanced power trench process, specially optimized to minimize on-resistance while maintaining excellent switching performance.
Features
AI Translation
- Maximum r<sub>DS(on)</sub> = 23 mΩ at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 7 A
- Maximum r<sub>DS(on)</sub> = 37 mΩ at V<sub>GS</sub> = 6 V, I<sub>D</sub> = 4 A
- Low profile — Power 33 package maximum height 1 mm
- 100% UI1L tested
- RoHS compliant
Applications
AI Translation
- DC-DC conversion
C890972 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTMFS7D5N15MC | onsemi | PQFN-8 | 50 | $ 2.7942 | ||
| FDMC86340ET80 | onsemi | PQFN-8 | 0 | $ 2.3976 | ||
| FDMC86160ET100 | onsemi | PQFN-8 | 0 | $ 3.2744 | ||
| FDMC86260ET150 | onsemi | PQFN-8 | 0 | $ 1.8686 | ||
| NTMFS10N3D2C | onsemi | PQFN-8 | 0 | $ 7.6195 | ||
| FDMS003N08C | onsemi | PQFN-8 | 0 | $ 4.973 |