Imágenes ilustrativas
Modelos EDAEasyEDA
AOS AOI4S60
| Fabricante | |
| N.º de pieza fab. | AOI4S60 |
| Nº LCSC | C6125478 |
| Emb. | TO-251A |
| Número de Cliente | |
| Atrib. clave | 600V 16A 3.5V 56.8W 900mΩ@10V 1 N-channel TO-251A Single FETs, MOSFETs RoHS |
| Hoja de Datos | AOS AOI4S60 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 1 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | AOS | |
| Emb. | TO-251A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 56.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 263pF | |
| Gate Charge(Qg) | 6nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | AOS | |
| Emb. | TO-251A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 56.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 263pF | |
| Gate Charge(Qg) | 6nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The AOD4S60, AOI4S60, and AOU4S60 are manufactured using the advanced αMOS™ high-voltage process, designed to deliver high performance and high durability for switching applications. These devices feature low on-resistance (R DS(on)), low gate charge (Qg), and low output capacitance energy storage (EOSS), with guaranteed avalanche capability, enabling rapid adoption in both new and existing off-line power supply designs.
Características
Traducción por IA
- Silicon Carbide Power MOSFET
- High-speed switching
- Low on-resistance RDS(on)
- Ultra-low losses
- Silicon Carbide Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Switching characteristics independent of temperature
- Positive temperature coefficient of forward voltage VF
- Extremely low stray inductance
- Kelvin source for easy gate driving
- Integrated NTC thermistor for temperature monitoring
- High integration
- Aluminum Nitride (AlN) substrate for enhanced thermal performance
Aplicaciones
Traducción por IA
- Welding Converters - Switched-Mode Power Supplies - Uninterruptible Power Supplies - Motor Control
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.4456 | $ 1.45 |
| 200+ | $ 0.5774 | $ 115.48 |
| 500+ | $ 0.5577 | $ 278.85 |
| 1,000+ | $ 0.5486 | $ 548.60 |
Encapsulado Estándar3500/Full Tube | ||
¿Mejor precio por mayor cantidad?
$
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | AOS | |
| Emb. | TO-251A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 56.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 263pF | |
| Gate Charge(Qg) | 6nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | AOS | |
| Emb. | TO-251A | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 56.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 263pF | |
| Gate Charge(Qg) | 6nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The AOD4S60, AOI4S60, and AOU4S60 are manufactured using the advanced αMOS™ high-voltage process, designed to deliver high performance and high durability for switching applications. These devices feature low on-resistance (R DS(on)), low gate charge (Qg), and low output capacitance energy storage (EOSS), with guaranteed avalanche capability, enabling rapid adoption in both new and existing off-line power supply designs.
Características
Traducción por IA
- Silicon Carbide Power MOSFET
- High-speed switching
- Low on-resistance RDS(on)
- Ultra-low losses
- Silicon Carbide Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Switching characteristics independent of temperature
- Positive temperature coefficient of forward voltage VF
- Extremely low stray inductance
- Kelvin source for easy gate driving
- Integrated NTC thermistor for temperature monitoring
- High integration
- Aluminum Nitride (AlN) substrate for enhanced thermal performance
Aplicaciones
Traducción por IA
- Welding Converters - Switched-Mode Power Supplies - Uninterruptible Power Supplies - Motor Control
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| AOI950A70 | AOS | TO-251A | 0 | $ 1.9499 |